White light modulated forming-free multilevel resistive switching in ZnO:Cu films

Saini, Mahesh; Kumar, Mohit; Mandal, Rusa; Mitra, Anirban; Som, T.

doi:10.1016/j.apsusc.2021.150271

Cited by 14 publications

(11 citation statements)

References 52 publications

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“…The current of both devices at HRS varies linearly with voltage in the small voltage region (the linear slope ∼1) and then increases drastically (the linear slope 2). This fitting result for HRS is agreed with a trap-controlled space-charge-limited conducting mechanism [26][27][28]. In the reset process, the I-V curves of both devices at LRS states present ohmic conduction with a linear slope of ∼1.…”

Section: Resultssupporting

confidence: 81%

Stable and reliable IGZO resistive switching device with HfAlO _x interfacial layer

Peng

Liu

et al. 2023

Nanotechnology

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The performance stability of the resistive switching (RS) is vital for a resistive random-access memory device. Here, by inserting a thin HfAlOx layer between the InGaZnO (IGZO) layer and the bottom Pt electrode, the RS performance in amorphous IGZO memory device is significantly improved. Comparing with a typical metal-insulator-metal structure, the device with HfAlOx layer exhibits lower switching voltages, faster switching speeds, lower switching energy and lower power consumption. As well, the uniformity of switching voltage and resistance state is also improved. Furthermore, the device with HfAlOx layer exhibits long retention time (＞104 s at 85℃) , high on/off ratio and more than 103 cycles of endurance at atmospheric environment. Those substantial improvements in IGZO memory device are attributed to the interface effects with a HfAlOx insertion layer. With such layer, the formation and rupture locations of Ag CFs are better regulated and confined, thus an improved performance stability.

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Section: Resultssupporting

confidence: 81%

Stable and reliable IGZO resistive switching device with HfAlO _x interfacial layer

Peng

Liu

et al. 2023

Nanotechnology

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“…Two slopes with ∼2.9 and ∼6.2 were well fitted, indicating trap-filled limited conduction. When the applied voltage reaches a certain threshold value, the trap states become completely filled, allowing for smooth electronic transport through the conduction band …”

Section: Results and Discussionmentioning

confidence: 99%

“…When the applied voltage reaches a certain threshold value, the trap states become completely filled, allowing for smooth electronic transport through the conduction band. 57 The stability of the devices was evaluated through endurance and retention tests. As shown in Figure 8a, the endurance test consisted of applying DC voltage for 1000 cycles with a readout voltage of +2.5 V. The resulting I−V curves showed consistent hysteresis behavior, suggesting that the results were repeatable.…”

Section: Resistive Switching Characterization Figure 6amentioning

confidence: 99%

Capacitive and RRAM Forming-Free Memory Behavior of Electron-Beam Deposited Ta₂O₅ Thin Film for Nonvolatile Memory Application

Singh,

Alam,

Singh

2023

ACS Appl. Electron. Mater.

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The present study reports the presence of capacitive memory and forming-free resistive random access memory (RRAM) in a tantalum pentoxide (Ta2O5) thin film (TF) device. The capacitance and voltage analysis of the electron-beam evaporated Ta2O5 TF device exhibits three distinct regimes: inversion, depletion, and accumulation, which decrease as the frequency of operation increases. This behavior is attributed to the interface state density (D it) and series resistance (R s). Moreover, the memory window of the Ta2O5 device was found to increase from 1.2 (± 1 V) to 7.9 (± 10 V). Furthermore, the resistive switching mechanism was investigated through the current (I) vs voltage (V) measurement for 1000 cycles. The device exhibits abnormal forming-free bipolar resistive switching. In addition, a desirable and stable switching behavior with resistance ratio of 102 and a retention up to 103 s at +2.5 V was observed. The overall findings of the Au/Ta2O5 TF/Si device could provide a pave way for nonvolatile memory (NVM) application.

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“…It is also interesting to explore the tristable RS mechanisms of the dextran–chitosan devices, which were analyzed by the linear fitting of the measured I–V plots. To throw light on the current conduction mechanism, the space-charge-limited conduction (SCLC) theory was invoked, and the I–V characteristics were analyzed by the power law [ 35 ]: I ∝ V α , where α is the scaling exponent bound up to the depth of the trap state distribution under the conduction band. Dependent on the power law, α = 1 conforms to the Ohmic regime (I ∝ V), where the applied bias is not strong enough to eject electrons from the electrodes and the conduction is governed by only the thermally generated electrons.…”

Section: Resultsmentioning

confidence: 99%

Multi-Bit Biomemristic Behavior for Neutral Polysaccharide Dextran Blended with Chitosan

2022

Nanomaterials

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Natural biomaterials applicable for biomemristors have drawn prominent attention and are of benefit to sustainability, biodegradability, biocompatibility, and metabolism. In this work, multi-bit biomemristors based on the neutral polysaccharide dextran were built using the spin-casting method, which was also employed to explore the effect of dextran on the ternary biomemristic behaviors of dextran–chitosan nanocomposites. The doping of 50 wt% dextran onto the bio-nanocomposite optimized the ratio of biomemristance in high-, intermediate-, and low-resistance states (105:104:1). The interaction between dextran and chitosan (hydrogen-bond network) was verified by Fourier transform infrared (FTIR) and Raman spectroscopy analysis; through this interaction, protons derived from the self-dissociation of water may migrate under the electric field, and so proton conduction may be the reason for the ternary biomemristic behaviors. Observations from X-ray diffraction (XRD), thermogravimetric analysis (TGA), and differential scanning calorimetry (DSC) analysis displayed that the 50 wt% dextran/50 wt% chitosan nanocomposite had the greatest amorphous ratio as well as the highest decomposition and peak transition temperatures in comparison with the other three dextran–chitosan nanocomposites. This work lays the foundation for neutral biomaterials applied to green ultra-high-density data-storage systems.

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White light modulated forming-free multilevel resistive switching in ZnO:Cu films

Cited by 14 publications

References 52 publications

Stable and reliable IGZO resistive switching device with HfAlO _x interfacial layer

Stable and reliable IGZO resistive switching device with HfAlO _x interfacial layer

Capacitive and RRAM Forming-Free Memory Behavior of Electron-Beam Deposited Ta₂O₅ Thin Film for Nonvolatile Memory Application

Multi-Bit Biomemristic Behavior for Neutral Polysaccharide Dextran Blended with Chitosan

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White light modulated forming-free multilevel resistive switching in ZnO:Cu films

Cited by 14 publications

References 52 publications

Stable and reliable IGZO resistive switching device with HfAlO x interfacial layer

Stable and reliable IGZO resistive switching device with HfAlO x interfacial layer

Capacitive and RRAM Forming-Free Memory Behavior of Electron-Beam Deposited Ta2O5 Thin Film for Nonvolatile Memory Application

Multi-Bit Biomemristic Behavior for Neutral Polysaccharide Dextran Blended with Chitosan

Contact Info

Product

Resources

About

Stable and reliable IGZO resistive switching device with HfAlO _x interfacial layer

Stable and reliable IGZO resistive switching device with HfAlO _x interfacial layer

Capacitive and RRAM Forming-Free Memory Behavior of Electron-Beam Deposited Ta₂O₅ Thin Film for Nonvolatile Memory Application