Capacitive and RRAM Forming-Free Memory Behavior of Electron-Beam Deposited Ta₂O₅ Thin Film for Nonvolatile Memory Application

Abstract

The present study reports the presence of capacitive memory and forming-free resistive random access memory (RRAM) in a tantalum pentoxide (Ta2O5) thin film (TF) device. The capacitance and voltage analysis of the electron-beam evaporated Ta2O5 TF device exhibits three distinct regimes: inversion, depletion, and accumulation, which decrease as the frequency of operation increases. This behavior is attributed to the interface state density (D it) and series resistance (R s). Moreover, the memory window of the Ta2O5 device was found to increase from 1.2 (± 1 V) to 7.9 (± 10 V). Furthermore, the resistive switching mechanism was investigated through the current (I) vs voltage (V) measurement for 1000 cycles. The device exhibits abnormal forming-free bipolar resistive switching. In addition, a desirable and stable switching behavior with resistance ratio of 102 and a retention up to 103 s at +2.5 V was observed. The overall findings of the Au/Ta2O5 TF/Si device could provide a pave way for nonvolatile memory (NVM) application.

Modulation of electrical properties of sputtered Ta2O5 films by variation of RF power and substrate temperature

“…The properties of the thin film greatly depend upon the methods of preparation and post-deposition treatments. Though preparation of high-quality Ta 2 O 5 film is a challenging issue, many possible methods are used to fabricate Ta 2 O 5 thin film such as chemical vapor deposition (CVD) technique [27], thermal oxidation [28], e-beam evaporation [29], atomic layer deposition [30], anodization [31], DC sputtering [32], RF sputtering [20] and sol-gel process [33]. Among these techniques, RF reactive magnetron sputtering has many advantages due to its low deposition temperature, non-toxic approach, uniformity, conformal coverage, and high yield [34][35][36].…”

Atomic‐Scale Phase Transformation in Perovskite LaCoOx Resistive Switching Memristive Devices

“…Nonvolatile memory (NVM) technologies have played a pivotal role in modern electronics, enabling data retention without a constant power supply, essential for applications ranging from consumer electronics to data centers. [1][2][3] In recent years, flash memory has dominated because of its high storage density and high erase speed. However, conventional flash memory faces challenges as the technology scales down, such as scalability limits and increased power consumption.…”