Abstract:The performance stability of the resistive switching (RS) is vital for a resistive random-access memory device. Here, by inserting a thin HfAlOx layer between the InGaZnO (IGZO) layer and the bottom Pt electrode, the RS performance in amorphous IGZO memory device is significantly improved. Comparing with a typical metal-insulator-metal structure, the device with HfAlOx layer exhibits lower switching voltages, faster switching speeds, lower switching energy and lower power consumption. As well, the uniformity o… Show more
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