Well-ordered nanoparticle arrays for floating gate memory applications

Abstract

A non-volatile floating gate memory device containing well-ordered Au nanoparticles (NPs) is fabricated as a metal–oxide–semiconductor capacitor structure. With superior control on the size, shape and position of nanoparticles, the presented nano-floating gate memory (NFGM) device possesses almost perfect precision of device geometry. The well-ordered Au NPs embedded within the memory device exhibit large memory window at low operation voltages (8.8V @ ± 15V), fast operation time (<10−4 s) and good retention (up to 107 s). In this work, the structural properties of the NFGM device are correlated with the examined electrical properties. The current results are compared with the other studies in the literature to emphasis the advantages of the precise ordering and geometry of the NPs.

A novel NiO-based p-i-n ultraviolet photodiode

“…These C-V trends and the bi-directional hysteresis under reverse bias can also be attributed to the existence of the deep-level states and interface states [47][48][49]. In light of these results, it can be concluded that -1.25 V < Vb < -2.1V reverse voltage range is the optimum voltage range for the operation of the photodiode with high responsivity.…”

An organic ambipolar charge trapping non-volatile memory device based on double heterojunctions

“…3 , while during the 100-cycle endurance test, the stable current ratio of more than 5×10 2 is obtained. The retention property is analyzed, where the fast electrons detrapping degrades the retention time.…”

“…However, there may be heterojunction effect, where the Fermi levels alignment causes the band bending and the built-in field that hinders or facilitates the injection of the carriers from the active layer to the charge trapping layer. The band bending and the built-in field caused by the energy level alignment has also been proved in organic heterojunctions, such as in Copper (II) 1,2,3,4,8,9,10,11,15,16,17,18,22,23,24,25-hexadecafluoro-29H,31Hphthalocyanine (F 16 CuPc)/ Copper (II) Phthalocyanine (CuPc) heterojunction [20], in Zinc Phthalocyanine (ZnPc)/ fullerene (C 60 ) heterojunction [21]. The band bending due to the Fermi-level alignment causes space charge regions that the charge accumulates at the heterojunction interface to form accumulation-type heterojunction, or charge depletes at the heterojunction interface to form depletion-type heterojunction.…”

“…With the rapid development of the semiconductor industry and information technology, non-volatile memory emerges as a promising and important branch for information storage and exchange. Since S. M. Sze et al proposed the thin film floating gate non-volatile memory based on field effect transistor configuration [1], diverse non-volatile memories based on field effect transistor configuration have been developed, such as the nano-particle floating gate memory [2,3], single-electron memory cell [4], Silicon Oxide Nitride Oxide Silicon (SONOS) memory [5,6], ferroelectric memory [7], and so forth. The most representative application of the non-volatile memory lies in the Flash memory, where the industrial applications have been envisioned.…”

High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles

“…On the contrary, NVM devices based on metallic nanoparticles as a floating gate have gained more advantages, such as higher tapping probability of charges, ensuring the stable probability of retention property in case of defects in the tunneling or control oxide layer, and larger memory window [ 8 , 32 , 33 , 34 ]. In this context, metal nanoparticles as floating gate layer in NVM devices offer a noteworthy consideration in the memory operations subjected to attain high programming or erasing properties, a greater probability of the charge retention, and preferable density of state (DOS) near the fermi-level [ 32 , 33 , 35 , 36 , 37 , 38 ]. Additionally, metal oxide semiconductor field-effect transistor (FET)-related NVM devices are also investigated for memory operations such as read-only memory, endurance, and retention [ 39 , 40 ].…”