Weakly bound carbon-hydrogen complex in silicon

Hoffmann, Lone; Lavrov, E. V.; Nielsen, Bjarne; Hourahine, B.; Jones, R.; Öberg, Sven; Briddon, P.R.

doi:10.1103/physrevb.61.16659

Cited by 16 publications

(7 citation statements)

References 21 publications

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“…The (0/ϩ) electrical level of CH 2BC is in excellent agreement with (C-H) I . This defect configuration has previously been observed by infrared absorption 23 …”

Section: Discussionsupporting

confidence: 73%

“…The metastable configuration with symmetry C 1h , CH 2BC ϩ , has been previously connected with a prominent optical center, stable to ϳ225 K, found in low-temperature proton implanted Si:C, 23 and is only 0.2 eV higher in energy than CH 1BC ϩ ͑Table I͒. In the work of Hoffmann et al, 23 local vibrational modes corresponding to perturbed H BC ϩ and C s defects were found but the electrical activity of the defects was not investigated.…”

Section: Theoretical Resultsmentioning

confidence: 85%

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Electrical activity of carbon-hydrogen centers in Si

Andersen¹,

Peaker²,

Dobaczewski

et al. 2002

Phys. Rev. B

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The electrical activity of Cs-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique has been used to measure the stress-energy tensor and the results are compared with theoretical modeling. At low temperatures, implanted H is trapped as a negative-U center with a donor level in the upper half of the gap. However, at higher temperatures, H migrates closer to the carbon impurity and the donor level falls, crossing the gap. At the same time, an acceptor level is introduced into the upper gap making the defect a positive-U center

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“…The (0/ϩ) electrical level of CH 2BC is in excellent agreement with (C-H) I . This defect configuration has previously been observed by infrared absorption 23 …”

Section: Discussionsupporting

confidence: 73%

Section: Theoretical Resultsmentioning

confidence: 85%

Electrical activity of carbon-hydrogen centers in Si

Andersen¹,

Peaker²,

Dobaczewski

et al. 2002

Phys. Rev. B

Self Cite

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“…3 we conclude that (C-H) I is identical to a carbon-hydrogen center previously identified in carbon-rich float-zone silicon 5 under experimental conditions similar to those of the present study. The (C-H) I defect has also been observed by infrared absorption, 16 and interpreted 5,16 as a carbon-perturbed form of bond-center hydrogen. As mentioned in the Introduction it consists of a carbon atom at a substitution site of the silicon lattice next to a Si-H-Si three-center bond ͓see Fig.…”

Section: B Isochronal Annealingmentioning

confidence: 95%

Bond-center hydrogen in diluteSi1−xGexalloys: Laplace deep-level transient spectroscopy

et al. 2003

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We apply Laplace deep-level transient spectroscopy in situ after low-temperature proton implantation into dilute Si 1Ϫx Ge x alloys and identify the deep donor state of hydrogen occupying a strained Si-Si bond-center site next to Ge. The activation energy of the electron emission from the donor is ϳ158 meV when extrapolated to zero electrical field. We construct a configuration diagram of the Ge-strained site from formation and annealing data and deduce that alloying with ϳ1% Ge does not significantly influence the low-temperature migration of hydrogen as compared to elemental Si. We observe two bond-center-type carbon-hydrogen centers and conclude that carbon impurities act as much stronger traps for hydrogen than the alloy Ge atoms.

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“…In the presence of periodic arrays of pinning centers vortex dynamics show interesting commensurate or matching effects when the number of vortices is an integer or a fraction of the number of pinning sites, leading to a strong enhancement of the critical current and a strong decrease in vortex mobility and ac penetration. Attention has been mainly focused on regular arrays of holes (antidots) [1], blind holes [2] and magnetic [3] or non-magnetic normal dots [4].…”

Section: Introductionmentioning

confidence: 99%

Superconducting heterostructures: from antipinning to pinning potentials

Carreira¹,

Chiliotte²,

Bekeris³

et al. 2014

Supercond. Sci. Technol.

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We study vortex lattice dynamics in a heterostructure that combines two type-II superconductors: a niobium film and a dense triangular array of submicrometric vanadium (V) pillars. Magnetic ac susceptibility measurements reveal a sudden increase in ac penetration, related to an increase in vortex mobility above a magnetic field, * H T ( ), that decreases linearly with temperature. Additionally, temperature independent matching effects that occur when the number of vortices in the sample is an integer of the number of V pillars, strongly reduce vortex mobility, and were observed for the first and second matching fields, H 1 and H 2 . The angular dependence of H 1 , H 2 and * H T ( ) shows that matching is determined by the normal applied field component, while * H T ( ) is independent of the applied field orientation. This important result identifies * H T ( ) with the critical field boundary for the normal to superconducting transition of V pillars. Below * H T ( ), superconducting V pillars repel vortices, and the array becomes an 'antipinning' landscape that is more effective in reducing vortex mobility than the 'pinning' landscape of the normal V sites above * H T ( ). Matching effects are observed both below and above * H T ( ), implying the presence of ordered vortex configurations for 'antipinning' or 'pinning' arrays.

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Weakly bound carbon-hydrogen complex in silicon

Cited by 16 publications

References 21 publications

Electrical activity of carbon-hydrogen centers in Si

Electrical activity of carbon-hydrogen centers in Si

Bond-center hydrogen in diluteSi1−xGexalloys: Laplace deep-level transient spectroscopy

Superconducting heterostructures: from antipinning to pinning potentials

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