Electrical activity of carbon-hydrogen centers in Si

Andersen, Ole; Peaker, А. R.; Dobaczewski, L.; Nielsen, K. Bonde; Hourahine, B.; Jones, Richard; Briddon, P.R.; Öberg, Sven

doi:10.1103/physrevb.66.235205

Cited by 38 publications

(46 citation statements)

References 29 publications

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“…Furthermore, the defect does not show the Poole–Frenkel effect for electric fields up to 1.5 × 10 4 V cm −1 . This is in good agreement with findings of Endrös et al 14 and Andersen et al 15 for the CH defect. Also the E90 peak anneals out at temperatures below 400 K. The annealing at this temperature confirms further our assignment of E90 to the CH complex 14, 15.…”

Section: Resultssupporting

confidence: 93%

A re‐examination of cobalt‐related defects in n‐ and p‐type silicon

Scheffler

Kolkovsky

Weber

2012

Physica Status Solidi (a)

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In the present work cobalt‐doped n‐ and p‐type silicon samples were studied by means of deep level transient spectroscopy (DLTS) and Laplace‐DLTS (LDLTS). We demonstrate that two dominant DLTS peaks previously assigned to a substitutional Co defect have different annealing behaviour and therefore belong to different defects. After wet chemical etching three other peaks (E90, E140 and H160) were observed in the samples. The intensity of the peaks becomes larger in the H‐plasma treated samples. This together with depth profiling demonstrates that the peaks are hydrogen‐related defects. The origin of the peaks will be discussed.

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Section: Resultssupporting

confidence: 93%

A re‐examination of cobalt‐related defects in n‐ and p‐type silicon

Scheffler

Kolkovsky

Weber

2012

Physica Status Solidi (a)

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“…This is in good agreement with findings of Endrös et al 14 and Andersen et al 15 for the CH defect. Also the E90 peak anneals out at temperatures below 400 K. The annealing at this temperature confirms further our assignment of E90 to the CH complex 14, 15.…”

Section: Resultsmentioning

confidence: 99%

Towards Surface‐Supported Supramolecular Architectures: Tailored Coordination Assembly of 1,4‐Benzenedicarboxylate and Fe on Cu(100)

Lingenfelder

Spillmann

Dmitriev

et al. 2004

Chemistry A European J

188

232

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We present a comprehensive investigation of the modular assembly of surface-supported metal-organic coordination systems with specific topologies and high structural stability formed by vapor deposition of 1,4-benzenedicarboxylic acid molecules and iron atoms on a Cu(100) surface under ultra-high vacuum conditions. By making use of the two carboxylate moieties available for lateral linkage to Fe atoms, we succeeded in the fabrication of distinct Fe-carboxylate coordination architectures at the surface by carefully adjusting the ligand and metal concentration ratio and the temperature of the post-deposition annealing treatment. The mononuclear, 1D-polymeric and fully 2D-reticulated metallosupramolecular arrangements obtained were characterized in situ at the single-molecule level by scanning tunneling microscopy.

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“…Instead, three defects dominate at low temperatures: H 2 *(C), C 2 H 2 , and VH 3 HC. Other well‐studied C–H centers 62 are not sufficiently stable to be relevant to studies of samples quenched from high temperatures.…”

Section: H In C‐rich Simentioning

confidence: 99%

Hydrogen in C‐rich Si and the diffusion of vacancy–H complexes

Estreicher

Docaj

Bebek

et al. 2012

Physica Status Solidi (a)

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The sites, gap levels, and migration barriers of interstitial H in Si are predicted. The hydrogenation of C‐rich Si results in the formation of H2*(C) and C2H2, in contrast to FZ‐Si where H2 molecules dominate. The fully saturated vacancy (VH4) also forms. This complex is normally stable up to 650 °C. However, in C‐rich Si, VH4 anneals around 550 °C while the VH3HC complex appears. There, C replaces one of the four Si nearest‐neighbors to the vacancy. This implies that VH4 begins to diffuse at 550 °C, and then traps at Cs. This in turn implies that all the VHn complexes (n = 1, 2, 3, 4) are mobile at moderate temperatures. In this paper, we discuss the energetics of H in Si, summarize the key experimental and theoretical results about H interactions in C‐rich Si, and discuss the migration paths and activation energies of the four VHn complexes.

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Electrical activity of carbon-hydrogen centers in Si

Cited by 38 publications

References 29 publications

A re‐examination of cobalt‐related defects in n‐ and p‐type silicon

A re‐examination of cobalt‐related defects in n‐ and p‐type silicon

Towards Surface‐Supported Supramolecular Architectures: Tailored Coordination Assembly of 1,4‐Benzenedicarboxylate and Fe on Cu(100)

Hydrogen in C‐rich Si and the diffusion of vacancy–H complexes

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