Hydrogen in C‐rich Si and the diffusion of vacancy–H complexes

Estreicher, Stefan K.; Docaj, A.; Bebek, Małgorzata; Backlund, D. J.; Stavola, Michael

doi:10.1002/pssa.201200054

Cited by 24 publications

(41 citation statements)

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“…38,39 The perfect crystal is used as the marker: The reference donor and acceptor levels are the top of the valence band and the bottom of the conduction band, respectively. This works well 29,40 for a wide range of defects provided that a 3 Â 3 Â 3 k-point sampling is used and the lattice constant of the supercell is optimized in each charge state.…”

Section: A Methodologymentioning

confidence: 86%

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Nickel: A very fast diffuser in silicon

Lindroos

Fenning

Backlund

et al. 2013

Journal of Applied Physics

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Articles you may be interested in Molecular adsorption on silicon (001): A systematic evaluation of size effects in slab and cluster models AIP Advances 3, 042117 (2013) Nickel is increasingly used in both IC and photovoltaic device fabrication, yet it has the potential to create highly recombination-active precipitates in silicon. For nearly three decades, the accepted nickel diffusivity in silicon has been D Ni ðTÞ ¼ 2:3 Â 10 À3 expðÀ0:47 eV=k B TÞ cm 2 /s, a surprisingly low value given reports of rapid nickel diffusion in industrial applications. In this paper, we employ modern experimental methods to measure the higher nickel diffusivity D Ni ðTÞ ¼ ð1:69 6 0:74Þ Â 10 À4 expðÀ0:15 6 0:04 eV=k B TÞ cm 2 /s. The measured activation energy is close to that predicted by first-principles theory using the nudged-elastic-band method. Our measured diffusivity of nickel is higher than previously published values at temperatures below 1150 C, and orders of magnitude higher when extrapolated to room temperature. V C 2013 AIP Publishing LLC.

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Section: A Methodologymentioning

confidence: 86%

“…40,54 No Ni-H bond forms but Ni i is 0.24 eV more stable 55 near H bc þ than far away from it. Indeed, the Si-Si bond relaxes when forming Si-H-Si and this increases the volume available at the adjacent interstitial sites.…”

Section: Interactions Of Ni I With Defectsmentioning

confidence: 99%

Nickel: A very fast diffuser in silicon

Lindroos

Fenning

Backlund

et al. 2013

Journal of Applied Physics

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“…At present no hydrogen related defects have been identified in Ge using DLTS, however, VH 1 and VH 3 have been predicted to each have a deep level between the valence and conduction bands [20]. IR lines ascribed to VH 2 and VH 4 disappeared after annealing at 400 K and 590 K respectively [21] and as VH 3 diffuses at a lower temperature than VH in silicon [22] it was expected that annealing the sample to 550 K would diffuse VH 3 into the bulk but not diffuse VH 4 back towards the region under the junction which is one possible explanation of why additional ICP treatment failed to reintroduce this defect. The identification of the E 0.31 defect as VH 3 is speculative at this time but the lack of other impurities suggests that hydrogen plays a role in the formation of this defect.…”

Section: Resultsmentioning

confidence: 99%

Unexpected properties of the inductively coupled plasma induced defect in germanium

Coelho

Auret

Rensburg

et al. 2014

Physica B: Condensed Matter

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Inductively coupled plasma (ICP) etching of germanium introduces a single defect, the E 0.31 electron trap, for a large range of argon partial pressures from 4 × 10 -3 to 6.5 × 10 -4 mbar that correspond to ion energies of 8 to 60 eV. Ge of three crystallographic orientations, (100), (110) and (111), treated with 20 and 60 eV ICP had defect concentration profiles that were similar in appearance, with a maximum concentration of 10 14 cm -3 extending more than a µm into the material, approximately three orders of magnitude deeper than what TRIM simulations predicted. All profiles were measured using Laplace deep level transient spectroscopy (L-DLTS), a technique that is sensitive to defect concentrations as low as 10 11 cm -3 . Isochronal annealing of samples showed concentration curves broadening after a 400 K anneal and decreasing to the 10 13 cm -3 level after a 450 K anneal. Unannealed samples measured after a year exhibited similar decreases in defect concentration without broadening of their profiles. A 550 K anneal lowered the defect concentration to levels below the L-DLTS detection limit. Thereafter additional plasma treatment of the surface failed to reintroduce this defect indicating that the structure required for the formation of E 0.31 was no longer present in the region under observation.

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“…For example, the diffusion of both H + and H − is impeded by the attraction to ionised dopant atoms. In contrast, H 0 can move freely without the influence of electrostatic effects and has a diffusivity orders of magnitude higher than that of H + and H − [110,[112][113][114].…”

Section: Manipulation Of Hydrogen Charge Statesmentioning

confidence: 99%

Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells

et al. 2017

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This paper discusses developments in the mitigation of light-induced degradation caused by boron-oxygen defects in boron-doped Czochralski grown silicon. Particular attention is paid to the fabrication of industrial silicon solar cells with treatments for sensitive materials using illuminated annealing. It highlights the importance and desirability of using hydrogen-containing dielectric layers and a subsequent firing process to inject hydrogen throughout the bulk of the silicon solar cell and subsequent illuminated annealing processes for the formation of the boron-oxygen defects and simultaneously manipulate the charge states of hydrogen to enable defect passivation. For the photovoltaic industry with a current capacity of approximately 100 GW peak, the mitigation of boron-oxygen related light-induced degradation is a necessity to use cost-effective B-doped silicon while benefitting from the high-efficiency potential of new solar cell concepts.

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Hydrogen in C‐rich Si and the diffusion of vacancy–H complexes

Cited by 24 publications

References 76 publications

Nickel: A very fast diffuser in silicon

Nickel: A very fast diffuser in silicon

Unexpected properties of the inductively coupled plasma induced defect in germanium

Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells

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