Bond-center hydrogen in dilute<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ge</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>alloys: Laplace deep-level transient spectroscopy

Nielsen, K. Bonde; Dobaczewski, L.; Peaker, А. R.; Abrosimov, Nikolai V.

doi:10.1103/physrevb.68.045204

Cited by 17 publications

(11 citation statements)

References 19 publications

(20 reference statements)

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“…Studies of impurity behaviour in the bulk alloy, particularly those which span the composition range, are quite limited, however. With regard to hydrogen, infrared absorption [6] and DLTS [7] studies have focused on observations of bond-centred hydrogen properties in dilute alloys at either end of the composition range; theoretical studies have enabled local vibrational modes of this species to be modelled for similar compositions [8]. In these cases, modified properties of the bond-centred species have been observed owing to altered local bonding environments due to the presence of near-by impurity atoms.…”

Section: Introductionmentioning

confidence: 97%

Muonium hyperfine parameters in Si1−xGex alloys

King¹,

Lichti²,

Cottrell³

et al. 2006

Physica B: Condensed Matter

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Section: Introductionmentioning

confidence: 97%

Muonium hyperfine parameters in Si1−xGex alloys

King¹,

Lichti²,

Cottrell³

et al. 2006

Physica B: Condensed Matter

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“…In addition, alloying induced local atomic disorder and band gap shrinkage, two major properties of the alloy, lead to serious deviations from what is known in pure silicon. We may cite the role played by local atomic arrangements upon elastic properties of the vacancy, 3 hydrogen atoms in the bond center position, 4 the A-center, 5 and some transition metals and their complexes. [6][7][8][9] Due to its high diffusivity, iron may easily be introduced into silicon-based materials during heat treatment.…”

Section: Introductionmentioning

confidence: 99%

Interaction of iron with the local environment inSiGealloys investigated with Laplace transform deep level spectroscopy

et al. 2006

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Laplace transform deep level transient spectroscopy ͑LDLTS͒ is used to investigate the alloy effects on iron related deep centers in Si 1−x Ge x . A clear buildup of alloy disorder as a function of the germanium content has been observed for the isolated interstitial iron. However, due to specific features of the interstitial tetrahedral position of iron in the cubic lattice, it is not possible to say how many Ge atoms are responsible for the alloy-induced level splitting of the electronic state of the interstitial iron related defect. The observation of alloy splitting for the iron-boron pair has been used to resolve this issue. Different shells of nearest-neighbor atoms form the alloy pattern for both the interstitial isolated iron and the iron-boron pair. We show that for the iron-boron pair the occupied state is formed when a hole is closer to iron in the case of low germanium content. For more germanium rich alloy compositions the hole is bound by boron resulting in a dramatic change in the LDLTS peak structure. In an attempt to simulate the observed patterns, the alloying effects originating from different shells containing the defect were considered. A clear tendency for iron to form a pair with boron siting in germanium rich neighborhood is demonstrated. Finally, the influence of alloying on iron motion has been investigated. Similarities in the dissociation potential barrier heights of the iron-boron pair in pure silicon and Si 0.98 Ge 0.02 alloy suggest that the presence of Ge atoms induces only a second-order effect on the average diffusion barrier in alloys with low Ge content ͑less than 3%͒.

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“…[5][6][7][8] Both configurations are well understood in silicon and germanium based on investigations using various experimental techniques such as Fourier-transform infrared-absorption spectroscopy, 9,10 electron-paramagnetic resonance, 11 deep-level transient spectroscopy ͑DLTS͒, and high-resolution Laplace DLTS. [5][6][7][8] In these materials the H impurity is found to exist in three different charge states H + , H 0 , and H − depending on which site in the crystal lattice it occupies. These charge states give rise to either a donor level ͑0 / +͒ ascribed to hydrogen at the BC site or an acceptor level ͑− / 0͒ ascribed to the T interstitial site.…”

Section: Introductionmentioning

confidence: 99%

Donor level of interstitial hydrogen in CdTe

et al. 2009

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The first results demonstrating the existence of a donor level of interstitial hydrogen in CdTe are presented. From the Arrhenius analysis, this donor level is characterized by an activation energy for electron emission E C − E t = 0.06 eV and a pre-exponential factor equal to 2 ϫ 10 5 s −1 K 2 , and is observed after a low-temperature implantation with protons. Above 75 K the hydrogen-deep donor state is unstable converting to a more stable configuration which is believed to be a negatively charged form of isolated H. The results are analogous to what has been observed for interstitial hydrogen in GaAs.

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Bond-center hydrogen in diluteSi1−xGexalloys: Laplace deep-level transient spectroscopy

Cited by 17 publications

References 19 publications

Muonium hyperfine parameters in Si1−xGex alloys

Muonium hyperfine parameters in Si1−xGex alloys

Interaction of iron with the local environment inSiGealloys investigated with Laplace transform deep level spectroscopy

Donor level of interstitial hydrogen in CdTe

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