Weak-Field Magnetoresistance and the Valence-Band Structure of SnTe

Magnetic order effects on electric susceptibility hole mass of Sn1-x MnxTe

“…(13) to (16) of reference [19]. At T = 300 K, as it has been already established [3] [20] : mo is the free electron mass.…”

“…In This problem has received much attention [16]. Although there is some evidence supporting the existence of multivalence bands in SnTe, it has been shown in reference [3] [17] for bismuth.…”

Temperature Anomalies of Transport Properties in SnTe Epitaxial Thin Films

“…High mobility and, for such films, the high value of b below 200 K point to the possibility of a formation of an ordered structure in which electron scattering on defects becomes insignificant due to their regular distribution over the crystal lattice. One can assume that rise of R H above 200 K, interpreted usually in the framework of the two-band model [7,8], is connected with nonstoichiometrical defect disorder and/or the appearance of defects of a new type. The simultaneous decrease of the coefficient b can be attributed to an increase in the contribution of scattering by defects, which also might be caused by structural disordering.…”

Galvanomagnetic effects and alloy scattering in n‐type Pb1–xSnxTe at low temperatures

“…This quantity is obtained experimentally for all samples from the mobility by combining the relation On the contrary, the analysis assuming the scattering due to the donor-ion core potential indicates that the experimental data cannot be explained. I n this case, the quantity ( N , e / N ) -l should be compared with the similar expression on the righthand side of (9). It was found that even if we assumed any value for parameters U,(core) and U,(core), the energy dependence of the quantity could not be expressed by the formula n / h U,(core)2 F. This indicates that the real relaxation time of scattering does not depend on N,.…”