Temperature Anomalies of Transport Properties in SnTe Epitaxial Thin Films

Nashchekina, O. N.; Рогачева, Е. И.

doi:10.1002/(sici)1521-396x(199810)169:2<235::aid-pssa235>3.0.co;2-v

Cited by 6 publications

(7 citation statements)

References 6 publications

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“…Studying the σ(T) dependences of the thin films showed that for the SnTe films with p H = (1.0-2.5)⋅10 26 m -3 near 100 K in the σ(T) curves there is an anomaly associated with the FPT, although less pronounced than for bulk samples. At higher values of p H, the anomaly is not detected (Nashchekina et al, 1998). Thus, the results of our studies convincingly confirm the existence of the FPT in the stoichiometric SnTe, the determined value of T C being in good agreement with the results of other authors.…”

Section: C C T / (T T ) At T T T / 2 (T T ) At T Tsupporting

confidence: 92%

“…The temperature dependences of R H , µ H , σ in the range 77 -300 K were obtained for SnTe epitaxial and polycrystalline thin films with different thicknesses d (0.2 -2.0 µm) and different carrier concentrations: p H77 = 3.5⋅10 26 , 4.5 × 10 26 m -3 , and p H77 = 1 × 10 27 m -3 (Nashchekina & Rogacheva, 1998). Techniques were developed for the preparation of monoand polycrystalline SnTe films with controlled concentration of NSD and high µ H (Nashchekina et al, 1999a;Nashchekina et al, 1995).…”

Section: Electronic Propertiesmentioning

confidence: 99%

“…We will limit our consideration to two doping schemes -the introduction of elementary impurities and the introduction of IA by cation substitution. (Nashchekina et al,1999aNashchekina & Rogacheva, 1998). a: 1, 3-d =0.6 µm, 2, 4-d=0.2 µm; b: d =0.4 µm; c:…”

Section: Mechanism Of Impurity Dissolution In Nonstoichiometric Sntementioning

confidence: 99%

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Nonstoichiometry and Properties of SnTe Semiconductor Phase of Variable Composition

Рогачева¹

2012

Stoichiometry and Materials Science - When Numbers Matter

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Section: C C T / (T T ) At T T T / 2 (T T ) At T Tsupporting

confidence: 92%

Section: Electronic Propertiesmentioning

confidence: 99%

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Nonstoichiometry and Properties of SnTe Semiconductor Phase of Variable Composition

Рогачева¹

2012

Stoichiometry and Materials Science - When Numbers Matter

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“…The assumption of the existance of resonant levels in the lead chalcogenides was confirmed by calculations made according to the SlaterKoster method [16] as well as with a cluster model [17]. It is well known that the IV-VI semiconductors are prone to have significant deviations from stochiometry, showing a high concentration of native defects [8,15]. It was found that the Pb vacancies produce p-type conduction while the chalcogenide vacancies produce n-type 220 conduction.…”

Section: Resultsmentioning

confidence: 84%

Valence Band Resonant Levels in p-Type Pb1?xEuxSe

Almaggoussi

Abounadi

Charar

et al. 2002

phys. stat. sol. (a)

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Hall coefficient measurements on p-type lead salt PbSe and its ternary alloys Pb 1--x Eu x Se (x < 5%) were performed in the temperature range 10-300 K. The Fermi-level position was calculated as a function of temperature and correlated to the variation of the measured Hall concentration. The analysis indicates the existence of a resonant level in the valence band. A model, which takes account of both a deep level in the band gap and a resonant level, was performed to obtain a good fit to the experimental data.

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“…Earlier we reported on observing new, previously unknown temperature phase transitions in crystals and thin films of SnTe with a high degree of deviation from stoichiometry using X-ray diffractometry and transport property measurements [8][9][10]. We suggested that the transitions were related to redistribution of defects at their sufficiently high concentrations and formation of defect configurations corresponding to the free energy minimum at a given temperature.…”

Section: Introductionmentioning

confidence: 94%

Temperature dependences of SnTe linear expansion coefficient

Рогачева¹

2002

Semicond. Phys. Quantum Electron. Optoelectron.

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The influence of kinetic factors on the temperature dependences of the linear expansion coefficient (α) for SnTe crystals with different degrees of deviation from stoichiometry was studied. The α(T) dependences were obtained by using stationary and dynamic regimes. In the case of the stationary regime, an increase in α with increasing temperature (4.2-300 K) was registered, and anomalies in the α(T) dependences were observed and attributed to phase transitions. After quick plunging into liquid nitrogen and subsequent heating the samples up to 300 K without keeping them for a long time at fixed temperatures (a dynamic regime), the α(T) dependences exhibited an oscillatory behavior, most pronounced in the sample with 50.4 at.% Te. It is suggested that the observed behavior of the α(T) dependences is connected with an oscillatory process of approaching the equilibrium in the intrinsic defect subsystem and with overlapping of relaxation processes and temperature phase transitions.

show abstract

Temperature Anomalies of Transport Properties in SnTe Epitaxial Thin Films

Cited by 6 publications

References 6 publications

Nonstoichiometry and Properties of SnTe Semiconductor Phase of Variable Composition

Nonstoichiometry and Properties of SnTe Semiconductor Phase of Variable Composition

Valence Band Resonant Levels in p-Type Pb1?xEuxSe

Temperature dependences of SnTe linear expansion coefficient

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