Magnetic order effects on electric susceptibility hole mass of Sn1-x MnxTe

Abstract

To cite this version:M. Escorne, A. Mauger. Magnetic order effects on electric susceptibility hole mass of Sn1-x MnxTe. Journal de Physique, 1979, 40 (4)

Half-metallicity, magnetism and electrical resistivity of Sn1−xMnxTe alloys in rock salt and zinc blende structures

“…We also show that excess Te atoms in the interstitial locations lower the strength of the AFM interactions between the Mn atoms. These observations are in consistence with several experimental studies reported in the literature [1][2][3][4]. Table 6 Resistivity ρ of the RS and ZB HM compounds in units of μΩ cm, as computed by using the Kubo-Greenwood formalism.…”

“…Several researchers [1][2][3][4] have carried out experimental investigation of the magnetic ordering effects in Sn 1À x Mn x Te alloys for small doping levels, x r 0:07. The structure in most cases is RS or small deviations around the RS structure.…”

“…These materials have small gaps of the order of 0.5 eV or less, and are suitable candidates for thermoelectric devices, infrared lasers and detectors. In recent years SnTe thin films doped with Mn have received some attention from experimentalists interested in studying the possibility of ferromagnetic/antiferromagnetic order or spin-glass phase in these materials, and anomalous Hall effect [1][2][3][4][5]. Recently SnTe-based superlattices were found to show a hole mobility of 2720 cm 2 /V s, which is among the highest values for any semiconductor material at room temperature reported so far [6].…”

Magnetism, half-metallicity and electrical transport properties of V- and Cr-doped semiconductor SnTe: A theoretical study

“…The DOS of these ordered compounds at their equilibrium lattice parameters are shown in Figs. (1)(2)(3)(4). Majority and minority spin DOS are shown as spin up and down, respectively.…”

“…1 In recent years, SnTe thin films doped with Mn have received some attention from experimentalists interested in the magnetic order effects such as ferromagnetism and spin glass phase, and anomalous Hall effect. [2][3][4] Recently, SnTe-based superlattices exhibited a hole mobility of 2720 cm 2 /V s, which is the highest value for any semiconductor material at room temperature was reported. 5 The doping levels of transition metals considered so far in SnTe are small, so that magnetism arises as a percolation effect among the magnetic atoms and the substance behaves as a dilute magnetic semiconductor.…”