Weak carrier localization on the $$(10\bar 10)$$ tellurium surface

Аверкиев, Н. С.; Pikus, G. E.

doi:10.1134/1.1130104

Cited by 9 publications

(11 citation statements)

References 5 publications

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“…The calculated [3] binding energy of a hole which is localized by an interface acceptor in a metal-insulator-semiconductor structure with 2DEG density n, -2 X 10" cm is 2.2 meV; this is consistent with our experimental results. The results of detailed calculations (Ref.…”

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confidence: 89%

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et al. 1995

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supporting

confidence: 89%

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et al. 1995

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“…13 These results show that transition from antilocalization to localization regime in graphene is possible when 3 ln(τ v /τ φ ) > 2 ln(τ φ /τ tr ) (here τ tr is momentum relaxation time). Both terms should be significantly large than unity.…”

Section: Introductionmentioning

confidence: 69%

Nondiffusion theory of weak localization magnetoresistance in graphene

Nestoklon

Averkiev

2014

Phys. Rev. B

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We put forward a theory of the weak localization in two dimensional graphene layers which explains experimentally observable transition between positive and negative magnetoresistance. Calculations are performed for the whole range of classically weak magnetic field with account on intervalley transitions. Contribution to the quantum correction which stems from closed trajectories with few scatterers is carefully taken into account. We show that intervalley transitions lead not only to the transition from weak antilocalization to the weak localization, but also to the non-monotonous dependence of the conductivity on the magnetic field.

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“…To find the screened Coulomb potentials of the interaction between electrons and holes in the system we use a 2D modification of the Thomas-Fermi approximation [5]. In this approximation the induced electric charge of the free- particle plasma is proportional to the variation of the potential energy, which is due to the resulting local electric field.…”

Section: Basic Formalismmentioning

confidence: 99%

Ionization Degree of Electron-Hole Plasma in GaN/AlGaN Quantum Wells

Nikolaev

Portnoi

2002

phys. stat. sol. (a)

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We study statistical properties of a strongly separated electron-hole plasma in an undoped GaN/ AlGaN quantum well. We use a self-consistent approach, which is based on the proper account of the impact of screening on bound and scattered states. A new mechanism of screening of Coulomb interaction by spatially indirect excitons is proposed and investigated within the framework of the Thomas-Fermi approximation. We calculate the ionization degree as a function of total carrier density for different quantum well widths. The interplay between screening, charge-separation and k-space filling effects is discussed.

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Weak carrier localization on the $$(10\bar 10)$$ tellurium surface

Cited by 9 publications

References 5 publications

Folkeset al.Reply:

Folkeset al.Reply:

Nondiffusion theory of weak localization magnetoresistance in graphene

Ionization Degree of Electron-Hole Plasma in GaN/AlGaN Quantum Wells

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