Low-temperature magnetotransport measurements on GaSb∕InAs∕AlSb coupled quantum well structures with a GaSb cap layer and self-consistent calculations of their electronic structure have led to the determination of the Fermi level at the surface, EFS, of undoped molecular-beam-epitaxy-grown GaSb. EFS is pinned around 0.2eV above the top of the GaSb valence band when the GaSb cap layer width is greater than around 900Å. For smaller GaSb cap widths, EFS decreases with the GaSb width. The undoped GaSb∕InAs∕AlSb heterostructure’s Fermi level is determined by bulk donor defects in the AlSb layer adjacent to the InAs quantum well.

We report on the fabrication of Josephson junctions using the topological crystalline insulator Pb_{0.5}Sn_{0.5}Te as the weak link. The properties of these junctions are characterized and compared to those fabricated with weak links of PbTe, a similar material yet topologically trivial. Most striking is the difference in the ac Josephson effect: junctions made with Pb_{0.5}Sn_{0.5}Te exhibit a rich subharmonic structure consistent with a skewed current-phase relation. This structure is absent in junctions fabricated from PbTe. A discussion is given on the origin of this effect as an indication of novel behavior arising from the topologically nontrivial surface state.

We report growth and characterization of epitaxial α-Sn thin films grown on CdTe(111)B. Noninvasive techniques verify the film's pseduomorphic growth before fabrication of magnetotransport devices, overcoming ex-situ obstacles on uncapped films for measurement in the Hall bar geometry. We identify a transition to metallic behavior at low temperature with large magnetoresistance, high mobility, and quantum oscillations tentatively suggesting an n-type Dirac semimetallic channel. A parallel p-type dopant channel with high carrier density is seen to dominate at thinner film thicknesses. Careful preparation of the CdTe surface before growth is considered crucial to attain a low dopant density and accessible topological states on an insulating substrate. arXiv:1903.06723v2 [cond-mat.str-el]

No abstract

The two-dimensional nonlinear interaction of two planar ion-acoustic solitons has been studied experimentally. When the angle between the wave vectors of the two interacting solitons is small and the soli ton amplitudes approach a critical value, a resonant threesoliton interaction occurs.