Wavy growth onset in strain-balanced InGaAs multi-quantum wells

Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate

“…As a result, the interfaces between the well and the barrier layers in the sample grown at 510 C were much smoother than in the sample grown at 530 C. In the sample grown at 510 C, no crystalline defects could be seen in the observation area of the cross-sectional TEM, which had a length of 1.8 m in the lateral direction (not shown in the figure). In summary, a comparison of The anisotropic thickness modulation mentioned above has already been reported for strain-compensated MQW structures of other material systems, such as InGaAs(P) and InAsP [15][16][17]. As in those previous studies, growth of the compressive-strained well layers is more favorable on locally thin regions of the tensile-strained barrier layer, and also the thickness modulation can be suppressed by decreasing the substrate temperature [18,19].…”