Infrared Physics & Technology
 2018
DOI: 10.1016/j.infrared.2018.08.015
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The optimum condition of GaxIn1-xP/GaAs1-yPy strain compensation for excessive strained In0.15GaAs MQWs in 1000 nm infrared light-emitting diode

Lee-Ku Kwac
1
,
Hong-Gun Kim
2
,
Hyung-Joo Lee3
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Cited by 2 publications
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