Wavelength modification of Al<i>x</i>Ga1−<i>x</i>As quantum well heterostructure lasers by layer interdiffusion

Camras, M. D.; Holonyak, N.; Burnham, R. D.; Streifer, W.; Scifres, D. R.; Paoli, T. L.; Lindström, C.

doi:10.1063/1.331825

Cited by 93 publications

(14 citation statements)

References 8 publications

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“…As a result of this process, they found, depending on the anneal conditions, different grades of intermixing in a superlattice. In 1983, lasers with blue-shifted emission wavelengths were fabricated using this technique [12]- [14]. In 1984, stripe geometry QW laser devices using IILD to laterally define the waveguide of a buried heterostructure became available [15]- [17], and one year later, the first QW laser with transparent facet windows fabricated by IILD was demonstrated [18].…”

Section: Summary Of Important Intermixing Techniquesmentioning

confidence: 99%

Quantum-well intermixing for fabrication of lasers and photonic integrated circuits

Hofstetter

Maisenholder

Zappe

1998

IEEE J. Select. Topics Quantum Electron.

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Abstract-Various applications of quantum-well intermixing, ranging from multiwavelength lasers to complex photonic integrated circuits, are described. The fabrication of these GaAs-AlGaAs-based devices relies on the postgrowth definition of regions with varying bandgap, enabling the manufacture of wavelength shifted modulators and lasers, as well as the integration of transparent waveguides with absorbing lasers and detectors. The impurity-free vacancy-enhanced disordering technique employed, and its integration with existing process technologies, will be presented, and examples of multicolor lasers, wavelength shifted modulators and integrated optical interferometers are shown. These applications yield high-optical functionality using relatively simple process and integration technology.Index Terms-Interferometers, monolithic integration, multiwavelength lasers, photonic integrated circuits, quantum-well intermixing.

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Section: Summary Of Important Intermixing Techniquesmentioning

confidence: 99%

Quantum-well intermixing for fabrication of lasers and photonic integrated circuits

Hofstetter

Maisenholder

Zappe

1998

IEEE J. Select. Topics Quantum Electron.

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“…The interdiffusion of the materials in the well and barrier layers results in a blue shift of the emission spectrum [2]. The technological interest on this effect arises from the possibility to tune the wavelength of an optical emitter by simply annealing the device.…”

Section: Introductionmentioning

confidence: 99%

Optical study of interdiffusion in CdTe and ZnSe based quantum wells

Tönnies

Bacher

Forchel

et al. 1994

Journal of Crystal Growth

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The interdiffusion in single quantum well structures was studied for a variety of II -VI semiconductor materials based on CdTe and ZnSe. In particular we have investigated CdTejCdMnTe, CdTejCdMgTe, HgxCdt_xTejHg y Cd t _ y Te and ZnSejCdZnSe structures in which an intermixing of column II elements can be induced as well as ZnSejZnSSe allowing an interdiffusion within the column VI sublattice. The diffusion was induced by rapid thermal annealing (RTA) for 1 min at different temperatures. The resulting blue shift of the characteristic emission spectrum was analyzed using photoluminescence spectroscopy. We observed a significant differencc of thc diffusion behavior between both groups of materials. While in all three CdTe based material systems an almost complete intcrdiffusion within the column II sublattice could be obtained at a high optical quality of the structures, both ZnSe based quantum wells show only remarkably small diffusion lengths. For all three CdTe based quantum wells we derived an activation energy of the interdiffusion process from a simple Fickian diffusion model applied to our measurements. We obtained a value of 2.8 eV for CdTejCdMnTe and CdTejCdMgTe and a value 2.1 eV for HgxCdt_xTejHgyCdl_yTe.Due to the fundamental role of diffusion for the production of semiconductor devices, the study of diffusion in semiconductor crystals has been of large interest in the last years. Self-diffusion or impurity diffusion in 111-V and 11-VI bulk materials was studied, e.g. by secondary ion mass spectroscopy (SIMS), a technique that allows a direct scanning of the diffusion profile [1]. In recent years, diffusion has also been investigated in thin heterostructures which offer an * Corresponding author.interesting source of concentration gradients. The interdiffusion of the materials in the well and barrier layers results in a blue shift of the emission spectrum [2]. The technological interest on this effect arises from the possibility to tune the wavelength of an optical emitter by simply annealing the device. On the other hand, it has been shown in III -V quantum .wells that the selective implantation of ions in a semiconductor heterostructure offers the possibility to define a lateral confinement [3,4]. Up to now the investigation of diffusion in heterostructures has been restricted mainly to 111-V materials. Only few 0022-0248/94/$07.00

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“…In this section, a brief review will be given on these intermixing techniques and their ability to address above criteria. The IID method has been used to fabricate lasers with blue-shifted emission wavelengths (Camras et al, 1983), or laterally defined waveguide of a buried heterostructure (Deppe et al, 1985), or transparent facet windows for high-power applications (Thornton et al, 1986). Both the surface diffusion and implantation methods have good control of the degree of disordering and enable planar process by masking of desired regions (Meehan et al, 1985;Thornton et al, 1986).…”

Section: Intermixing Techniquesmentioning

confidence: 99%