Quantum-well intermixing for fabrication of lasers and photonic integrated circuits

Abstract

Abstract-Various applications of quantum-well intermixing, ranging from multiwavelength lasers to complex photonic integrated circuits, are described. The fabrication of these GaAs-AlGaAs-based devices relies on the postgrowth definition of regions with varying bandgap, enabling the manufacture of wavelength shifted modulators and lasers, as well as the integration of transparent waveguides with absorbing lasers and detectors. The impurity-free vacancy-enhanced disordering technique employed, and its integration with existing process technologies, will be presented, and examples of multicolor lasers, wavelength shifted modulators and integrated optical interferometers are shown. These applications yield high-optical functionality using relatively simple process and integration technology.Index Terms-Interferometers, monolithic integration, multiwavelength lasers, photonic integrated circuits, quantum-well intermixing.

Disordering of InGaN/GaN Superlattices after High-Pressure Annealing

“…While compositional disordering of superlattices within the InAlGaAs materials system has been extensively studied [5,6], superlattice disordering in III-nitrides has only recently been observed [4]. The interdiffusion of In and Ga in In x Ga 1-x N alloys is complicated by the immiscibility of InN and GaN [7], which can result in phase separation in thick InGaN layers [8] and MQW structures [9].…”

Effect of ion implantation on quantum well infrared photodetectors

“…As an alternative, quantum well intermixing techniques [7] are capable of tuning the absorption wavelength of quantum wells after growth. The techniques have been used successfully in fabricating optoelectronic devices [8][9][10][11][12] such as lasers and waveguides. Quantum well intermixing techniques include [7]: laser induced disordering, impurity free vacancy disordering, impurity induced disordering and ion implantation induced disordering, and each has been used to tune the detection wavelength of QWIPs [13][14][15][16][17][18][19].…”

Control of the band-gap shift in quantum-well intermixing using a germanium interlayer

“…This technique has been successfully applied to the fabrication of low-loss waveguides and integrated photonic devices. 2,3 There are several methods to induce quantumwell intermixing. [4][5][6][7] Among them, the impurity-free vacancy disordering ͑IFVD͒ is considered promising for its simplicity, resulting in low damage to the crystal quality and low optical losses.…”