Wavelength and Constant Magnetic field Dependence of the Steady-state Photoconductivity of a Bifacial Silicon Solar Cell

Diao, Amadou; Sissoko, G.

doi:10.4172/2169-0022.1000381

Cited by 2 publications

(2 citation statements)

References 18 publications

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“…In Figure 8, we notice that for a given curve, the power has a horizontal stage 4 10 m s Sb ≥ × . As Sb reflects the lost factor of recombination, when it is weak, the power reaches its most important value, then the power decreases when Sb increases to finally take its smallest value for the large Sb value.…”

Section: Powermentioning

confidence: 97%

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Back Surface Recombination Velocity Modeling in White Biased Silicon Solar Cell under Steady State

Diasse¹,

Diao²,

Wade³

et al. 2018

JMP

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In this paper, we extend the concept of back surface recombination through a study of a silicon mono facial solar cell in static regime and under polychromatic illumination. Back surface recombination velocities noted Sbe , Sbj and Sbr are determined for which respectively we derived, the power, the fill factor and the conversion efficiency, that become constant whatever the thickness of the solar cell. We have then obtained the expression of the minority carrier's density in the base from the continuity equation. We then have determined the photocurrent density, the photo voltage, the power, the fill factor and finally the conversion efficiency.

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Section: Powermentioning

confidence: 97%

“…These recombination [1] parameters can be studied in static regime [2] [3] [4] or in dynamic regimes i.e. transient [5] [6] or frequency [7] [8] [9] [10].…”

Section: Introductionmentioning

confidence: 99%

Back Surface Recombination Velocity Modeling in White Biased Silicon Solar Cell under Steady State

Diasse¹,

Diao²,

Wade³

et al. 2018

JMP

Self Cite

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Bifacial Silicon Solar Cell Steady Photoconductivity under Constant Magnetic Field and Junction Recombination Velocity Effects

Diao¹,

Wade²,

Thiame³

et al. 2017

JMP

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The paper reported a theoretical study on the photoconductivity of a bifacial silicon solar cell under polychromatic illumination and a constant magnetic field effect. By use of the continuity equation in the base of the solar cell maintained in a constant temperature at 300 K, an expression of the excess minority carriers' density was determined according to the applied magnetic field, the base depth and the junction recombination velocity. From the expression of the minority carriers' density, the photoconductivity of the solar cell was deduced and which allowed us to predict some recombination phenomena, the use of such solar cell in optoelectronics. The profile of the photoconductivity also permitted us to utilize a linear model in order to determine an electrical capacitance that varied with magnetic field.

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Wavelength and Constant Magnetic field Dependence of the Steady-state Photoconductivity of a Bifacial Silicon Solar Cell

Cited by 2 publications

References 18 publications

Back Surface Recombination Velocity Modeling in White Biased Silicon Solar Cell under Steady State

Back Surface Recombination Velocity Modeling in White Biased Silicon Solar Cell under Steady State

Bifacial Silicon Solar Cell Steady Photoconductivity under Constant Magnetic Field and Junction Recombination Velocity Effects

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