Bifacial Silicon Solar Cell Steady Photoconductivity under Constant Magnetic Field and Junction Recombination Velocity Effects

Abstract

The paper reported a theoretical study on the photoconductivity of a bifacial silicon solar cell under polychromatic illumination and a constant magnetic field effect. By use of the continuity equation in the base of the solar cell maintained in a constant temperature at 300 K, an expression of the excess minority carriers' density was determined according to the applied magnetic field, the base depth and the junction recombination velocity. From the expression of the minority carriers' density, the photoconductivity of the solar cell was deduced and which allowed us to predict some recombination phenomena, the use of such solar cell in optoelectronics. The profile of the photoconductivity also permitted us to utilize a linear model in order to determine an electrical capacitance that varied with magnetic field.

Surface Recombination Concept as Applied to Determinate Silicon Solar Cell Base Optimum Thickness with Doping Level Effect

“… of illumination wavelength [20] [21] and illumination level n [22] [23] [24] or under dark [25];  of operating mode in particular, in static regime [26], the dynamic frequency regime [27] or transient dynamic regime [28] [29] [30]);  of external action by applied electromagnetic field [31] [32], or irradiation of nuclear particles [12] or a change in temperature [33]; In this work, the phenomenological parameters, such as the recombination velocity of the minority carrier in volume (τ), at the emitter-base junction (Sf) and at the rear face (Sb) of the thickness base (H), are studied. The optimum thickness (H) of the silicon solar cell base leading to the maximum short circuit current is determined according to the doping rate Nb (D), for a low level of illumination n. Figure 1 represents a silicon solar cell of type n + -p-p + under polychromatic illumination [34] [35].…”

AC Back Surface Recombination Velocity in n<sup>＋</sup>-p-p<sup>＋</sup> Silicon Solar Cell under Monochromatic Light and Temperature

“…5) External conditions applied to solar cell i.e. : mono or polychromatic illumination [24], temperature (T) [25], electromagnetic field (E, B) [26], irradiation flow (ϕp) by charged particles [27].…”

A Junction Electric Field Determination of a Bifacial Silicon Solar Cell under a Constant Magnetic Field Effect by Using the Photoconductivity Method

“…Many studies on the photoconductivity, have been utilized for determining a few intrinsic parameters of semiconductors in different regimes, as: in transient one [4] [5], where a relationship between the photoconductivity, the average lifetime and the generation rate of the photogenerated minority carriers has led to determine the density of states as function of the temperature; in steady-state [6]- [12], without an applied magnetic field, the effective lifetime of the minority carriers is determined and then the photoconductivity according to the temperature, the generation rate and the incident light intensity, what permits to determine the recombination density of states. While, with an applied magnetic field, the photoconductivity is, on one hand, as function of the magnetic field and the junction recombination velocity [13] and on the other hand, as function of the wavelength, the magnetic field and the incident power [14] [15]. By the use of the Fermi-Dirac distribution, it is demonstrated that the electrical conductivity of a silicon material decreased with the electric field [16].…”