Watt-class blue vertical-cavity surface-emitting laser arrays

Kuramoto, Masaru; Kobayashi, Seiichiro; Akagi, Takanobu; Tazawa, Kenji; Tanaka, Kazufumi; Nakata, Keisuke; Saito, Tatsuma

doi:10.7567/1882-0786/ab3aa6

Cited by 43 publications

(30 citation statements)

References 31 publications

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“…Consequently, nitride VCSELs are designed either with hybrid reflectors, which are comprised of an epitaxial mirror on one side and dielectric mirrors on the other side (as shown in Figure 10b), or with dual-dielectric reflectors comprised of dielectric DBR mirrors both at the bottom and on top of the heterostructure (as shown in Figure 10c). Different dielectric combinations, such as SiO 2 /TiO 2 [225], SiO 2 /Nb 2 O 5 [226], Ta 2 O 5 /SiO 2 [227], have been reportedly utilized for realizing DBR mirrors of nitride VCSELs. Poor current spreading because of the relatively large contact resistance of p-GaN is another area of concern for realizing nitride VCSELs.…”

Section: Nitride-based Vcselsmentioning

confidence: 99%

“…As VCSELs can be conveniently fabricated as a 2D array of devices which can emit light from the top in unison, blue nitride VCSEL lasers are considered to potentially be highly suited for applications related to VR/AR displays and micro-projectors. Watt-class blue VCSEL arrays with high-quality far-field beam patterns have recently been developed for such applications [226]. It is envisaged that the scope of nitride VCSELs will broaden further as devices of higher output power density, tunable spectral ranges, and lower threshold current densities are developed.…”

Section: Nitride-based Vcselsmentioning

confidence: 99%

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III-Nitride Light-Emitting Devices

et al. 2021

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III-nitride light-emitting devices have been subjects of intense research for the last several decades owing to the versatility of their applications for fundamental research, as well as their widespread commercial utilization. Nitride light-emitters in the form of light-emitting diodes (LEDs) and lasers have made remarkable progress in recent years, especially in the form of blue LEDs and lasers. However, to further extend the scope of these devices, both below and above the blue emission region of the electromagnetic spectrum, and also to expand their range of practical applications, a number of issues and challenges related to the growth of materials, device design, and fabrication need to be overcome. This review provides a detailed overview of nitride-based LEDs and lasers, starting from their early days of development to the present state-of-the-art light-emitting devices. Besides delineating the scientific and engineering milestones achieved in the path towards the development of the highly matured blue LEDs and lasers, this review provides a sketch of the prevailing challenges associated with the development of long-wavelength, as well as ultraviolet nitride LEDs and lasers. In addition to these, recent progress and future challenges related to the development of next-generation nitride emitters, which include exciton-polariton lasers, spin-LEDs and lasers, and nanostructured emitters based on nanowires and quantum dots, have also been elucidated in this review. The review concludes by touching on the more recent topic of hexagonal boron nitride-based light-emitting devices, which have already shown significant promise as deep ultraviolet and single-photon emitters.

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Section: Nitride-based Vcselsmentioning

confidence: 99%

Section: Nitride-based Vcselsmentioning

confidence: 99%

III-Nitride Light-Emitting Devices

et al. 2021

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“…AlInN DBR based VCSELs often possess large output power. [83][84][85] In 2018, Kuramoto et al proposed a VCSEL with 42 pairs of AlInN/GaN bottom DBR. [83] The record high output power of 15.7 mW at 20 °C was realized with a threshold of 4.5 mA.…”

Section: Hybrid Dielectric and Alinn/gan Dbrmentioning

confidence: 99%

“…AlInN DBR based VCSELs often possess large output power. [ 83–85 ] In 2018, Kuramoto et al. proposed a VCSEL with 42 pairs of AlInN/GaN bottom DBR.…”

Section: Distributed Bragg Resonatorsmentioning

confidence: 99%

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

Zhao

Liu

Wang

2022

Small

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are even smaller, only a few MHz, which are far away from the requirement of fast and large data wireless transmission for VLC. [5] To enhance the data transmission rates, complex modulation schemes and/ or equalization have to be utilized, which, however, hinder the further developments and applications. In addition, Si-based optoelectronic devices, like Si PDs, a bluefiltering technology are still used currently for shorter wavelength visible light detection, which suffers from complexity and low light transmittance. Furthermore, considering the development and mature application of GaN-based devices, there is a trend to realize the multifunctional single chip integration. However, the relative low coupling efficiency in the GaNbased optoelectronic devices still cannot meet the requirements. In this case, it is important to develop novel GaN-based optoelectronic devices with superior performances as alternative for miniaturization, simplification, and integration. To solve these problems, the concept of incorporating GaN-based devices with exotic optical resonances has been proposed. [5] Surface plasmons (SPs), microcavities, such as whispering gallery modes (WGMs) and distributed Bragg reflectors (DBR) are common optical resonant structures to improve the performances of GaN-based devices. [6][7][8][9] SPs are intrinsic electromagnetic modes excited at the metal-dielectric interfaces, accompanied with the collective oscillation behaviors of free electrons on the metal-side surfaces. [10] Giant electric field enhancement generates at the interface with exponentially decay along the perpendicular direction. Inside the GaN-based devices, the excitation of SPs can greatly enhance the density of states of the electron-hole pairs and improve the competitiveness of the radiative recombination to the non-radiative recombination. [11] It has also been demonstrated tremendously in early works that using SPs enables a path to break the optical diffraction limit of the semiconductor lasers and boost the light-matter coupling intensities in subwavelength dimensions. [11][12][13][14][15][16][17] In addition, GaN-based microcavities, such as photonics crystals, DBR, and micro disks, can confine and manipulate light. [18][19][20] By matching one or more dimensions of the cavities to the wavelength of the confined light, exotic effects can be produced, such as enhanced luminescence, directional emission, low-threshold lasing, etc. When light illuminates microcavities, the confined electron-hole pairs interact with the cavity photons. Their interaction rate relative to the average Being direct wide bandgap, III-nitride (III-N) semiconductors have many applications in optoelectronics, including light-emitting diodes, lasers, detectors, photocatalysis, etc. Incorporation of III-N semiconductors with high-efficiency optical resonances including surface plasmons, distributed Bragg reflectors and micro cavities, has attracted considerable interests for upgrading their performance, which can not only reveal the new coupling mechanism...

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“…In GaN VCSELs, there are two typical patterns of DBR configuration, which are described in this section in detail. In addition, in 2019, a die composed of 256 elements of the same wavelength band that were arrayed to obtain a total output of 1.19 W was proposed [6].…”

Section: Research Trendsmentioning

confidence: 99%

49‐2: Invited Paper: Blue and Green VCSEL for Full‐Color Display

Hamaguchi

Hoshina

Jyokawa

et al. 2021

Symp Digest of Tech Papers

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VCSELs have recently received increasing attention from engineers and scientists. The progress of the research on GaN‐based VCSELs that allowed blue and green emissions are often one of the main topics discussed in this field. Combining these lasers with existing red VCSELs realized a full‐color light source with superior characteristics of VCSELs, such as small power consumption, circular beam profiles, and arraying ability. These features should be suitable for displays, for example, AR displays. In this report, a brief review of the recent progress regarding these VCSELs and their future applications is provided.

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Watt-class blue vertical-cavity surface-emitting laser arrays

Cited by 43 publications

References 31 publications

III-Nitride Light-Emitting Devices

III-Nitride Light-Emitting Devices

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

49‐2: Invited Paper: Blue and Green VCSEL for Full‐Color Display

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