Water-Adsorbed States on Silicon and Silicon Oxide Surfaces Analyzed by using Heavy Water

Abstract

Water-adsorbed states on Si, native oxide and thermal oxide surfaces are investigated by means of thermal desorption spectroscopy. D2O is used to detect the water signals from these surfaces, which are separated from background H2O signals. The water desorption is 1/10 less than the hydrogen desorption. The amount of hydrogen adsorbed is largest on the Si surface and smallest on the thermal oxide surface. Four types of binding states of hydrogen are assigned to be SiO-H and Si-H on the silicon surface, Si-H in the native oxide, and Si-H in the interface between the native oxide and the silicon substrate.

Mechanical Properties and Chemical Reactions at the Directly Bonded Si–Si Interface

“…Since the TDS-APIMS system and the analysis have been described in detail elsewhere, [8][9][10] only the essentials are explained here. The wafer surfaces were heated at temperatures ranging from RT to 700 C at a heating rate of 10 C/ min by using an IR lamp.…”

Suppression of hydrogen-ion drift into underlying layers using plasma deposited silicon oxynitride film during high-density plasma chemical vapor deposition

“…The depth profiles of the hydrogen concentrations in thermal oxides can be divided into three zones, Zone-1: a rapidly decreasing concentration adjacent to the p-SiO x N y H z film/thermal oxide interface in the depth range of 50 to 100 nm, Zone-2: a concentration of bulk thermal oxide in the depth range of 20 to 50 nm, Zone-3: a peak at the thermal oxide/silicon substrate interface. In Zone-1, it is difficult to measure the hydrogen concentrations, because the SIMS measurements were conducted from the surface side and an artificial tailing of the hydrogen profiles caused by an atomic knock-on process could not be avoided [7][8][9][10]. Because the resolution of the depth profile for the upper interfaces of the thermal oxides is degraded, the hydrogen concentrations in Zone-1 are ignored.…”

The Role of Hydrogen, Oxygen and Water in Oxidation of Hydrogen Terminated Silicon Surface

“…The sanples were cut to the slze of 2cm x Scn fron n-type CZ 51(100) wafers with [3][4][5] O.cn. One type of the sanples was dlpped ln a 12" HF solutlon and rinsed in de-lonized(DI) water to terninate the silicon surface by hydrogen, after washings in H2SO4-H202, dlluted HF, NH40H-H20,-Hr0 and HCI-H202-H20.…”