Wafer-sized polycrystalline diamond photodetector planar arrays for solar-blind imaging

Zhang, Zhenfeng; Lin, Chao-Nan; Shan, Chongxin; Zang, Jinhao; Li, Kai-Yong; Lu, Yuanxiang; Li, Yizhe; Dong, Lin; Shan, Chongxin

doi:10.1039/d2tc00327a

Cited by 17 publications

(8 citation statements)

References 47 publications

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“…c) State‐of‐the‐art PDCR and dark current properties for a variety of diamond photodetectors. [ 31–55 ] The dashed purple line represents metal‐semiconductor‐metal structure detectors. The solid blue line represents nanoparticle technology on diamond detectors.…”

Section: Resultsmentioning

confidence: 99%

Ultrahigh Sensitivity Solar‐Blind UV Detection via Multistage‐Concentric‐Annulus Architecture Metasurface

Cai

Zhi

You

et al. 2023

Advanced Optical Materials

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High‐sensitivity photodetection capability has become an indispensable requirement for detecting feeble solar‐blind ultraviolet (UV) light. Micro‐nano metallic metasurface structures are employed to enhance the detector photoelectric performances. However, existing approaches are confronted with bottlenecks of structure simplification and efficacy mediocrity. Here, a distinctive diamond solar‐blind UV photodetector with a synthetic multistage‐concentric‐annulus (MCA) architecture metasurface is reported, which is prepared through a facile and peculiar Fraunhofer diffraction technique. The detector achieves an excellent photo‐to‐dark‐current ratio of 2.4×108 and maintains an extremely low dark current on the order of pA magnitude. The intrinsic response peak and resonance absorption phenomenon in solar‐blind UV are evident from the optical properties. Moreover, the surface potential distribution intuitively reveals that plasmon resonance enhances the UV scattering and absorption cross sections, thus facilitating the photogeneration of carriers. Meanwhile, it expressly demonstrates that multi‐level dipole interaction in the MCA structure accelerates the separation and extraction of electron–hole pairs through enhancing the localized electric field intensity. In addition, a wide range of variable temperature measurements further prove the device possesses capacity for working in extreme environments. This photodetection technology by virtue of a delicate and viable diffraction metasurface is anticipated to provide a leap forward for future applications in wide‐band‐gap semiconductor UV detectors.

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Section: Resultsmentioning

confidence: 99%

Ultrahigh Sensitivity Solar‐Blind UV Detection via Multistage‐Concentric‐Annulus Architecture Metasurface

Cai

Zhi

You

et al. 2023

Advanced Optical Materials

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“…In the past decades, various studies have reported DUV PDs using UWBG materials such as Ga 2 O 3 , [17][18][19] Mg x Zn 1-x O, [20][21][22] Al 1-x Sn x O, [23] III-nitrides (Al x Ga 1-x N, [24][25][26] AlN, [27][28][29] and BN [30][31][32] ), and diamond. [33][34][35] The high crystalline UWBG semiconductors provide the narrowband photo response based on bulk charge generation through the incident wavelength near optical bandgap. [36] In the case of the ternary UWBG semiconductors such as Mg x Zn 1-x O, Al 1-x Sn x O, Al x Ga 1-x N, and Zn 1-x Ga x O, [37] they have exhibited great potentials in the viewpoints of the band state modulation controlled by the inter-doping content.…”

Section: Introductionmentioning

confidence: 99%

Unleashing the Power of Quantum Dots: Emerging Applications from Deep‐Ultraviolet Photodetectors for Brighter Futures

Park,

Lee,

Hur

et al. 2023

Advanced Optical Materials

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Since their discovery in 1981, quantum dots (QDs) have been the center of attention in optoelectronic fields owing to their excellent properties such as clearly discrete band structure, high luminous efficiency, and tunable energy bandgap via dot size control. Among them, the bandgap increase characteristic based on the quantum confinement effect opens a new horizon in the field of deep ultraviolet photodetectors (DUV PDs). Emerging applications such as risk monitoring, wireless optical communication, and chemical sensing with extremely low environmental interference raise the significance of DUV PDs. Nonetheless, the limited material selection for DUV absorption has been the main obstacle for further applications. Along this line, this review systematically revisits the recent advances in QD‐based DUV PDs, using bandgap‐widened QDs, with a focus on the synthetic method, device architecture, and interactions among constituent components. Various QDs categorized into carbon, oxide, sulfide, and nitride are reviewed with the specific characteristics of each substance. The future prospects of QD‐based DUV PDs in terms of practical applications and the current challenges are discussed.

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“…Solar-blind deep-ultraviolet (DUV) light, which is characterized by a wavelength range of 200–280 nm, is absent at the Earth’s surface due to its absorption by ozone and the atmospheric layer. , Photodetectors that can operate within this wavelength range are known as solar-blind photodetectors (SBPDs) . These photodetectors have the ability to detect solar-blind light without interference from natural ambient light, making them valuable in both military and civil applications, such as missile guidance, intersatellite communication, flame detection, biochemical analysis, remote control, and more. − The development of wide-bandgap semiconductors like MgZnO, Al x Ga 1– x N, Ga 2 O 3 , − and diamond − has sparked significant research interest in SBPDs. These materials possess excellent radiation hardness, high thermal and chemical stability, and selective absorption in the solar-blind region.…”

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confidence: 99%

Solar-Blind Photodetector Arrays Fabricated by Weaving Strategy

Zhou,

Zhang,

Yang

et al. 2024

ACS Nano

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The quest for solar-blind photodetectors (SBPDs) with exceptional optoelectronic properties for imaging applications has prompted the investigation of SBPD arrays. Ga 2 O 3 , characterized by its ultrawide bandgap and low growth cost, has emerged as a promising material for solar-blind detection. In this study, SBPD arrays were fabricated by weaving Sn-doped β-Ga 2 O 3 microbelts (MBs). These MBs, which have a conductive core surrounded by a high-resistivity depletion surface layer resulting from the segregation of Sn and oxygen, are woven into a grid structure. Each intersection of the MBs functions as a photodetector pixel, with the intersecting MBs serving as the output electrodes of the pixel. This design simplifies the readout circuit for the photodetector array. The solar-blind photodetector array demonstrates superior solar-blind detection performance, including a dark current of 0.5 pA, a response time of 38.8 μs, a light/dark current ratio of 10 8 , and a responsivity of 300 A/W. This research may provide a feasible strategy for the fabrication of photodetector arrays, thus pushing forward the application of photodetectors in imaging.

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Wafer-sized polycrystalline diamond photodetector planar arrays for solar-blind imaging

Abstract: A high-quality 2-inch polycrystalline diamond was prepared by MPCVD technique. Photodetector planar arrays were then fabricated from the polycrystalline diamond. Clear solar-blind images have been obtained using the arrays as the sensing unit.

Cited by 17 publications

References 47 publications

Ultrahigh Sensitivity Solar‐Blind UV Detection via Multistage‐Concentric‐Annulus Architecture Metasurface

Ultrahigh Sensitivity Solar‐Blind UV Detection via Multistage‐Concentric‐Annulus Architecture Metasurface

Unleashing the Power of Quantum Dots: Emerging Applications from Deep‐Ultraviolet Photodetectors for Brighter Futures

Solar-Blind Photodetector Arrays Fabricated by Weaving Strategy

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