An excellent hybrid III‐nitride/nanocrystal nanohole light‐emitting diode (h‐LED) has been developed utilizing nonradiative resonant energy transfer (NRET) between violet/blue emitting InGaN/GaN multiple quantum wells (MQWs) and various wavelength emitting nanocrystals (NCs) as color‐conversion mediums. InGaN/GaN MQWs are fabricated into nanoholes by soft nanoimprint lithography to minimize the separation between MQWs and NCs. A significant reduction in the decay lifetime of excitons in the MQWs of the hybrid structure has been observed as a result of the NRET from the nitride emitter to NCs. The NRET efficiency of the hybrid structures is obtained from the decay curves, as high as 80%. Moreover, a modified Förster formulation has exhibited that the exciton coupling distance in the hybrid structures is less than the Förster's radius, demonstrating a strong coupling between MQWs and NCs. Finally, based on a systemic optimization for white emission indexes, a series of hybrid ternary complementary color h‐LEDs have been demonstrated with a high color rendering index, up to 82, covering the white light emission at different correlated color temperatures ranging from 2629 to 6636 K, corresponding to warm white, natural white, and cold white.
A series of highly ordered c-plane InGaN/GaN elliptic nanorod (NR) arrays were fabricated by our developed soft UV-curing nanoimprint lithography on a wafer. The photoluminescence (PL) integral intensities of NR samples show a remarkable enhancement by a factor of up to two orders of magnitude compared with their corresponding as-grown samples at room temperature. The radiative recombination in NR samples is found to be greatly enhanced due to not only the suppressed non-radiative recombination but also the strain relaxation and optical waveguide effects. It is demonstrated that elliptic NR arrays improve the light extraction greatly and have polarized emission, both of which possibly result from the broken structure symmetry. Green NR light-emitting diodes have been finally realized, with good current-voltage performance and uniform luminescence.
Controlling interfacial and surface carrier dynamics associated with nanostructured semiconductors is the key to achieving outperforming electrical and optical characteristics in photoelectrochemical (PEC) devices. A strategy for surface renovation by loading a co-catalyst (functional nanoparticles or layers) can unambiguously empower the device with superior surface property. In this work, a PEC-type solar-blind photodetector based on widebandgap p-AlGaN nanowires is reported on which Rh-Cr 2 O 3 hybrid structures are rationally loaded. Impressively, the external quantum efficiency of the devices is strikingly boosted from 28.8% to 86.7%, while a record-high responsivity of 178.3 mA W −1 is achieved, exhibiting one of the highest values among PEC photodetectors. Both experimental insights and theoretical modeling reveal that the initial decoration of Rh nanoparticles facilitate the interfacial carrier transfer and separation while optimizing the hydrogen adsorption energy. After subsequent incorporation of the amorphous Cr 2 O 3 layer, which acts as a molecular sieve, not only can the side reaction over Rh be effectively suppressed, but also the interfacial carrier dynamics and surface chemical reactivity are further boosted, thus contributing to more favorable PEC processes. The work offers a unique synergetic strategy to optimize the surface property of semiconductors for boosting photoresponse performance in aqueous environments for future bio-or chemicalrelated sensing applications.
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