Solar-Blind Photodetector Arrays Fabricated by Weaving Strategy

Abstract

The quest for solar-blind photodetectors (SBPDs) with exceptional optoelectronic properties for imaging applications has prompted the investigation of SBPD arrays. Ga 2 O 3 , characterized by its ultrawide bandgap and low growth cost, has emerged as a promising material for solar-blind detection. In this study, SBPD arrays were fabricated by weaving Sn-doped β-Ga 2 O 3 microbelts (MBs). These MBs, which have a conductive core surrounded by a high-resistivity depletion surface layer resulting from the segregation of Sn and oxygen, are woven into a grid structure. Each intersection of the MBs functions as a photodetector pixel, with the intersecting MBs serving as the output electrodes of the pixel. This design simplifies the readout circuit for the photodetector array. The solar-blind photodetector array demonstrates superior solar-blind detection performance, including a dark current of 0.5 pA, a response time of 38.8 μs, a light/dark current ratio of 10 8 , and a responsivity of 300 A/W. This research may provide a feasible strategy for the fabrication of photodetector arrays, thus pushing forward the application of photodetectors in imaging.

Recent progress on solar blind deep ultraviolet photodetectors based on metal halide perovskites

“…9 In 2024, an Sn-doped 8 × 8 β-Ga 2 O 3 solar blind detector array achieved a response of up to 300 A W −1 at a 50 V bias, with a dark current of 0.5 pA and a light-to-dark current ratio of 10 8 . 10 This allows us to intuitively see the surprising performance development of solar blind detectors based on traditional semiconductors. However, these materials usually need expensive equipment and complex processes, such as molecular beam epitaxy (MBE), plasma enhanced chemical vapor deposition (PECVD), laser molecular beam epitaxy (LMBE), and metal organic chemical vapor deposition (MOCVD).…”