Wafer Scale Transfer of Ultrathin Silicon Chips on Flexible Substrates for High Performance Bendable Systems

Navaraj, William Taube; Gupta, Shoubhik; Lorenzelli, Leandro; Dahiya, Ravinder

doi:10.1002/aelm.201700277

Cited by 70 publications

(81 citation statements)

References 59 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Some applications are shown in Figure 1. In terms of substrates, conventional silicon, and mature technologies have attained micro structures and ultrathin chips, which strengthen its flexibility (Lin C. C. et al, 2017;Navaraj et al, 2018). However, compared with this complicated process, the method for fabricating devices directly on the soft, bendable and skin-mounted polymer substrates, such as polyethylene (PE) and terephthalate (PET) is more advantageous.…”

Section: Introductionmentioning

confidence: 99%

Review of Printed Electrodes for Flexible Devices

Zhang

et al. 2019

Front. Mater.

View full text Add to dashboard Cite

Printed electronic technologies draw tremendous attention worldwide due to their ability to surpass the limitations of traditional high-cost electronics, based on rigid silicon, and the manufacturing of various devices on flexible substrates. As a critical component of flexible electronics, electrodes fabricated on soft, bendable, and stretchable substrates are of great importance. Based on the fabrication process, this paper classifies the mainstream technologies into two categories: top-down and bottom-up. Top-down technologies include physical evaporation methods, printing technologies and soft lithography, while bottom-up technologies involve polymer-assisted-metal-deposition methods and ion-exchange methods, respectively. In contrast to top-down technologies that transfer functional ink onto substrates directly, the bottom-up method achieves a great improvement in the adhesion between substrates and metal electrodes. In this paper, the challenges of top-down technologies, including cost, synthesis, and choice of ink for printing technologies, the limited choice of metal for bottom-up technologies and the mass production of these methods, are also discussed.

show abstract

Section: Introductionmentioning

confidence: 99%

Review of Printed Electrodes for Flexible Devices

Zhang

et al. 2019

Front. Mater.

View full text Add to dashboard Cite

show abstract

“…The dynamic tactile‐sensing element was interfaced with n‐metal oxide semiconductor field effect transistor (MOSFET) in the extended gate mode, as shown in Figure a, and tested under transient stimuli (P‐Press, R‐Release). This was for utilizing ultrathin chips with MOSFETs as the backplane circuit elements to realize piezoelectric oxide semiconductor field effect transistors (POSFETs) for tactile sensing . The results are shown in Figure c for pulse input and explained in Section .…”

Section: Methodsmentioning

confidence: 99%

Fingerprint‐Enhanced Capacitive‐Piezoelectric Flexible Sensing Skin to Discriminate Static and Dynamic Tactile Stimuli

Navaraj

Dahiya

2019

Advanced Intelligent Systems

Self Cite

125

View full text Add to dashboard Cite

Inspired by the structure and functions of the human skin, a highly sensitive capacitive‐piezoelectric flexible sensing skin with fingerprint‐like patterns to detect and discriminate between spatiotemporal tactile stimuli including static and dynamic pressures and textures is presented. The capacitive‐piezoelectric tandem sensing structure is embedded in the phalange of a 3D‐printed robotic hand, and a tempotron classifier system is used for tactile exploration. The dynamic tactile sensor, interfaced with an extended gate configuration to a common source metal oxide semiconductor field effect transistor (MOSFET), exhibits a sensitivity of 2.28 kPa−1. The capacitive sensing structure has nonlinear characteristics with sensitivity varying from 0.25 kPa−1 in the low‐pressure range (<100 Pa) to 0.002 kPa−1 in high pressure (≈2.5 kPa). The output from the presented sensor under a closed‐loop tactile scan, carried out with an industrial robotic arm, is used as latency‐coded spike trains in a spiking neural network (SNN) tempotron classifier system. With the capability of performing a real‐time binary naturalistic texture classification with a maximum accuracy of 99.45%, the presented bioinspired skin finds applications in robotics, prosthesis, wearable sensors, and medical devices.

show abstract

“…To validate the model for MoSe2, we have compared the imaginary E-k curve obtained using (6) with the most relevant branch of the complex band structure (Fig. 3) obtained from DFT simulation under TB09 meta-GGA (MGGA) approximation.…”

Section: Materials Modeling and Simulation Approachmentioning

confidence: 99%

“…The widely used inorganic semiconductors such as silicon (Si) based devices offer excellent performance, but owing to their brittle nature they do not offer much in terms of mechanical flexibility. Through innovative methods such as wafer or chip thinning [6] and ultra-thin electronic layers by printing Si nanowires [7], [8], there has been few attempts to overcome the above issues. However, the handling of delicate ultra-thin chips and large scale uniform printing of Si based electronic layers are still challenging tasks [9].…”

Section: Introductionmentioning

confidence: 99%

Monolayer MoSe₂-Based Tunneling Field Effect Transistor for Ultrasensitive Strain Sensing

Dubey

Yogeswaran

Liu

et al. 2020

IEEE Trans. Electron Devices

Self Cite

View full text Add to dashboard Cite

2020) Monolayer MoSe₂-based tunneling field effect transistor for ultrasensitive strain sensing. IEEE Transactions on Electron Devices, (Abstract-This paper presents a detailed investigation of the impact of mechanical strain on transition metal dichalcogenide (TMD) material based tunneling field-effect transistor (TFET). First, the impact of mechanical strain on material parameters of MoSe2 is calculated using the first principle of density functional theory (DFT) under meta generalized gradient approximation (MGGA). The device performance of the TMD TFET has been studied by solving the self-consistent 3D Poisson and Schrodinger equations in non-equilibrium Green's function (NEGF) framework. The results demonstrate that both ION and IOFF increase with uniaxial tensile strain, however, the change in ION/IOFF ratio remains small. This strain dependent performance change in TMD TFET has been utilized to design an ultra-sensitive strain sensor. The device shows a sensitivity (ΔIDS/IDS) of 3.61 for a strain of 2%. Due to the high sensitivity to the strain, these result shows the potential of using MoSe2 TFET as a flexible strain sensor. Furthermore, the strained TFET is analyzed for backend circuit performance. It is observed that the speed and energy efficiency of 10 stage inverter chain based on controlled strain improve substantially in comparison to unstrained TFET.Index Terms-TMD TFET, transition metal dichalcogenides, uniaxial strain.

show abstract

Wafer Scale Transfer of Ultrathin Silicon Chips on Flexible Substrates for High Performance Bendable Systems

Cited by 70 publications

References 59 publications

Review of Printed Electrodes for Flexible Devices

Review of Printed Electrodes for Flexible Devices

Fingerprint‐Enhanced Capacitive‐Piezoelectric Flexible Sensing Skin to Discriminate Static and Dynamic Tactile Stimuli

Monolayer MoSe₂-Based Tunneling Field Effect Transistor for Ultrasensitive Strain Sensing

Contact Info

Product

Resources

About