2019
DOI: 10.1007/s12274-019-2502-9
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Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2

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Cited by 114 publications
(112 citation statements)
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“…Through the designed precursors and processes of serial reactions during growth, energy barriers of serial reactions could be drastically reduced, so as to the growth rates were consequently boosted. [ 59–62 ]…”
Section: Controls Of 2d Single‐crystal Growthmentioning
confidence: 99%
“…Through the designed precursors and processes of serial reactions during growth, energy barriers of serial reactions could be drastically reduced, so as to the growth rates were consequently boosted. [ 59–62 ]…”
Section: Controls Of 2d Single‐crystal Growthmentioning
confidence: 99%
“…There are several suitable platforms for MoS 2 growth, with SiO 2 and sapphire being the most widely used due to their affordability. 12 Alternatively, graphene can also be used as a growth platform for MoS 2 . 3 Additionally, the use of a 2D material as a substrate for the growth of other 2D materials results in the creation of van der Waals (vdW) heterostructures.…”
Section: Introductionmentioning
confidence: 99%
“…The second one relies on the addition of spin‐coated liquid‐phase growth promoters, sodium molybdate (Na 2 MoO 4 ) and alkaline salt, prior to the growth phase. [ 30,31 ] Using a spin‐coated Na 2 MoO 4 solution both to ensure uniform seeding and as an additional molybdenum source during growth step yields highly homogenous, large 2D crystals of MoS 2 , leading to continuous monolayer formation under proper process parameters. The use of alkaline salts as a crystal growth catalyst is a common practice in the MoS 2 synthesis protocols, [ 32–34 ] which lowers the density of nucleation sites and the melting point of the solid‐state precursors.…”
Section: Resultsmentioning
confidence: 99%
“…Typical growth step is performed in a homemade MOCVD, hot-wall, vertical furnace for 30 min at 850 °C under the flow of 210 sccm of Ar, 1 sccm of O 2 , 4 sccm of H 2 ( Figure S1, Supporting Information). In contrast to previous publications, [30,31,34] we are adding several new elements and improvements to our process. First, we use separate bubblers for Mo(CO) 6 and DES, which increases the control in delivering the gases into the chamber, and 12 sccm of Ar is flowing through a bubbler filled with, Mo(CO) 6 , and 3 sccm of Ar through separate DES bubbler.…”
Section: Wafer-scale Mos 2 Growth and Transfermentioning
confidence: 99%