In this work, we
report the impact of substrate type on the morphological
and structural properties of molybdenum disulfide (MoS
2
) grown by chemical vapor deposition (CVD). MoS
2
synthesized
on a three-dimensional (3D) substrate, that is, SiO
2
, in
response to the change of the thermodynamic conditions yielded different
grain morphologies, including triangles, truncated triangles, and
circles. Simultaneously, MoS
2
on graphene is highly immune
to the modifications of the growth conditions, forming triangular
crystals only. We explain the differences between MoS
2
on
SiO
2
and graphene by the different surface diffusion mechanisms,
namely, hopping and gas-molecule-collision-like mechanisms, respectively.
As a result, we observe the formation of thermodynamically favorable
nuclei shapes on graphene, while on SiO
2
, a full spectrum
of domain shapes can be achieved. Additionally, graphene withstands
the growth process well, with only slight changes in strain and doping.
Furthermore, by the application of graphene as a growth substrate,
we realize van der Waals epitaxy and achieve strain-free growth, as
suggested by the photoluminescence (PL) studies. We indicate that
PL, contrary to Raman spectroscopy, enables us to arbitrarily determine
the strain levels in MoS
2
.