2020
DOI: 10.1021/acsami.0c06173
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Substrate-Induced Variances in Morphological and Structural Properties of MoS2 Grown by Chemical Vapor Deposition on Epitaxial Graphene and SiO2

Abstract: In this work, we report the impact of substrate type on the morphological and structural properties of molybdenum disulfide (MoS 2 ) grown by chemical vapor deposition (CVD). MoS 2 synthesized on a three-dimensional (3D) substrate, that is, SiO 2 , in response to the change of the thermodynamic conditions yielded different grain morphologies, including triangles, truncated triangles, and circles. Simultaneously, MoS 2 o… Show more

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Cited by 24 publications
(24 citation statements)
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“…This can be explained by high Mo flux controlled growth rates, 16,17,59 high gas-phase supersaturation at low reactor pressure, 22,35 and low diffusivity of surface species due to hydroxyl anchoring sites on the SiO 2 substrate. 60 While large grain sizes (>μm scale) are typically desired for high-performance (opto)electronic applications, the focus of our investigation was on the origin and effect of C incorporation instead of grain size, as previous works have already addressed the suppression of nucleation density, for example, by alkali-catalyzed synthesis. 38,49 Figure 2c−f shows an exemplary Raman spectrum of the coalesced 1L-MoS 2 film and the three Raman regions of interest.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…This can be explained by high Mo flux controlled growth rates, 16,17,59 high gas-phase supersaturation at low reactor pressure, 22,35 and low diffusivity of surface species due to hydroxyl anchoring sites on the SiO 2 substrate. 60 While large grain sizes (>μm scale) are typically desired for high-performance (opto)electronic applications, the focus of our investigation was on the origin and effect of C incorporation instead of grain size, as previous works have already addressed the suppression of nucleation density, for example, by alkali-catalyzed synthesis. 38,49 Figure 2c−f shows an exemplary Raman spectrum of the coalesced 1L-MoS 2 film and the three Raman regions of interest.…”
Section: Resultsmentioning
confidence: 99%
“…The high nucleation density of the first layer (∼10 3 μm –2 ), which has been observed consistently throughout this work (Figure S9), produces a nanocrystalline MoS 2 monolayer with small grain sizes (20–30 nm). This can be explained by high Mo flux controlled growth rates, ,, high gas-phase supersaturation at low reactor pressure, , and low diffusivity of surface species due to hydroxyl anchoring sites on the SiO 2 substrate . While large grain sizes (>μm scale) are typically desired for high-performance (opto)­electronic applications, the focus of our investigation was on the origin and effect of C incorporation instead of grain size, as previous works have already addressed the suppression of nucleation density, for example, by alkali-catalyzed synthesis. , …”
Section: Resultsmentioning
confidence: 99%
“…[3][4][5][6][7] Single MoS 2 layers show unique properties. They can be synthesised either in a bottom-up, e. g., chemical vapour deposition (CVD), [8][9][10] or top-down, e. g., exfoliation, approach. [11,12] While the latter generally offers high-quality 2D materials, it fails to produce large-scale single layers independ-ently of the substrate and hence lacks scalability.…”
Section: Introductionmentioning
confidence: 99%
“…From the broad family of atomically thin, two-dimensional (2D) materials the molybdenum disulphide (MoS 2 ) has been found particularly interesting in recent years. Being a member of the transition metal dichalcogenides (TMD) [1], MoS 2 unique electronic [2,3] and optical properties [4] combined with high mechanical flexibility [5,6] make it an attractive candidate for a potential new generation of wearable devices [7], flexible sensors [8][9][10] or nanoelectronics [2,11] as well as heterostructure research and development [12][13][14][15][16][17][18][19][20]. Therefore, after years of extensive study, the shift of academic focus from small, lab-scale synthesis methods towards the prototype applications and scalable processes is inevitable [21][22][23].…”
Section: Introductionmentioning
confidence: 99%