Wafer bonding of (211) Cd0.96Zn0.04Te on (001) silicon

Miclaus, C.; Malouf, G.; Johnson, S. M.; Rhiger, David R.; Goorsky, Mark S.

doi:10.1007/s11664-004-0045-6

Cited by 7 publications

(7 citation statements)

References 12 publications

(6 reference statements)

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“…We have already demonstrated successful bonding of (211) CdZnTe wafers to (001) silicon substrates using SiN dielectric interfacial layers. 7 In that case, a thin CdZnTe layer could be produced by etching, grinding, and polishing the CdZnTe substrate. The inclusion of a layer transfer step by hydrogen-induced exfoliation, however, allows for the reuse of the original CdZnTe substrate.…”

Section: Introductionmentioning

confidence: 99%

Exfoliation and blistering of Cd0.96Zn0.04Te substrates by ion implantation

Miclaus

Malouf

Johnson

et al. 2005

Journal of Elec Materi

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As part of a series of wafer bonding experiments, the exfoliation/blistering of ion-implanted Cd 0.96 Zn 0.04 Te substrates was investigated as a function of postimplantation annealing conditions. (211) Cd 0.96 Zn 0.04 Te samples were implanted either with hydrogen (5 ϫ 10 16 cm Ϫ2 ; 40-200 keV) or co-implanted with boron (1 ϫ 10 15 cm Ϫ2 ; 147 keV) and hydrogen (1-5 ϫ 10 16 cm Ϫ2 ; 40 keV) at intended implant temperatures of 253 K or 77 K. Silicon reference samples were simultaneously co-implanted. The change in the implant profile after annealing at low temperatures (Ͻ300°C) was monitored using high-resolution x-ray diffraction, atomic force microscopy (AFM), and optical microscopy. The samples implanted at the higher temperature did not show any evidence of blistering after annealing, although there was evidence of sample heating above 253 K during the implant. The samples implanted at 77 K blistered at temperatures ranging from 150°C to 300°C, depending on the hydrogen implant dose and the presence of the boron co-implant. The production of blisters under different implant and annealing conditions is consistent with nucleation of subsurface defects at lower temperature, followed by blistering/exfoliation at higher temperature. The surface roughness remained comparable to that of the as-implanted sample after the lower temperature anneal sequence, so this defect nucleation step is consistent with a wafer bond annealing step prior to exfoliation. Higher temperature anneals lead to exfoliation of all samples implanted at 77 K, although the blistering temperature (150-300°C) was a strong function of the implant conditions. The exfoliated layer thickness was 330 nm, in good agreement with the projected range. The "optimum" conditions based on our experimental data showed that implanting CdZnTe with H ϩ at 77 K and a dose of 5 ϫ 10 16 /cm 2 is compatible with developing high interfacial energy at the bonded interface during a low-temperature (150°C) anneal followed by layer exfoliation at higher (300°C) temperature.

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Section: Introductionmentioning

confidence: 99%

Exfoliation and blistering of Cd0.96Zn0.04Te substrates by ion implantation

Miclaus

Malouf

Johnson

et al. 2005

Journal of Elec Materi

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“…The A face is the appropriate face for bonding as the B face is used for subsequent epitaxial growth. PECVD SiN (6,8), deposited at 300 °C, , 900 mTorr, and 40W, produced a deposition rate of 10 nm/min and 50 nm was deposited. The surface roughness matched that of the underlying substrate.…”

Section: Methodsmentioning

confidence: 99%

“…Earlier work (6,7) showed the feasibility of (211)B CdZnTe bonded on Si(001) substrates using silicon nitride bonding layers and that hydrogen implantation and subsequent annealing can produce hydrogen platelets which lead to blistered and exfoliated surfaces on the (211)B CZT. The latter step is important given the high cost of CZT substrates.…”

Section: Introductionmentioning

confidence: 99%

Wafer Bonding of CdZnTe / Si Structures

Goorsky

Miclaus

2006

ECS Trans.

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In this work, we demonstrate the transfer of Cd0.96Zn0.04Te layers to Si substrates by both bond and etch back and by ion exfoliation techniques. The (211)A face was employed for the bonding face to expose the pre-ferred (211)B face for subsequent HgCdTe growth. SiN intermediate lay-ers were used to facilitate the bond process. For the bond-and-etch proc-ess, 10 mm CdZnTe layers were transferred to silicon substrates. For ion-exfoliated layers, layers of 0.3 - 1 μm were transferred. The low level of implant-induced strain in the rpe-exfoliated layer is consistent with results from other materials. After transfer, these structures exhibited no strain and exhibited high crystal quality (as determined by double crystal x-ray topography and triple axis x-ray diffraction).

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“…Using porous silicon/Si wafers in conjunction with wafer bonding and hydrogen exfoliation processes may bypass the limitation to homoepitaxial applications to create transfer-capable monolithic heterostructures. 7,8 A variety of composite semiconductor structures have been produced [9][10][11][12][13][14][15][16][17][18][19] using wafer bonding and hydrogen exfoliation techniques; this study focuses on the demonstrating the compatibility of porous silicon films with these processes for use in layer transfer applications.…”

Section: Introductionmentioning

confidence: 99%

Porous Silicon Films for Thin Film Layer Transfer Applications and Wafer Bonding

Joshi¹,

Hu²,

Goorsky³

2010

ECS Trans.

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Porous silicon films were fabricated from p+-Si (0.001-0.005 Ω cm) for their applicability to wafer bonding and layer transfer. Wafer bonding of porous silicon surfaces using silicon nitride interlayers was demonstrated, without the use of high temperature annealing. Conditions for producing porous silicon films compatible with both a) bonding surface requirements and b) layer transfer mechanical requirements were investigated. Nanoindentation showed quadratic dependence of Young's Modulus on relative density; films with mid-range Young's moduli were selected for layer transfer applications. Microstructural changes in annealed porous silicon films were studied using scanning electron microscopy and high resolution x-ray diffraction. Coarsening was observed at temperatures as low as 300 °C, the films remained pseudomorphic after annealing at all temperatures. After subsequent higher temperature annealing, mechanical fracture of the bonded stack occurred through the porous layer. The fracture mechanism for these structures is proposed.

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Wafer bonding of (211) Cd0.96Zn0.04Te on (001) silicon

Cited by 7 publications

References 12 publications

Exfoliation and blistering of Cd0.96Zn0.04Te substrates by ion implantation

Exfoliation and blistering of Cd0.96Zn0.04Te substrates by ion implantation

Wafer Bonding of CdZnTe / Si Structures

Porous Silicon Films for Thin Film Layer Transfer Applications and Wafer Bonding

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