Wafer Bonding of CdZnTe / Si Structures

Abstract

In this work, we demonstrate the transfer of Cd0.96Zn0.04Te layers to Si substrates by both bond and etch back and by ion exfoliation techniques. The (211)A face was employed for the bonding face to expose the pre-ferred (211)B face for subsequent HgCdTe growth. SiN intermediate lay-ers were used to facilitate the bond process. For the bond-and-etch proc-ess, 10 mm CdZnTe layers were transferred to silicon substrates. For ion-exfoliated layers, layers of 0.3 - 1 μm were transferred. The low level of implant-induced strain in the rpe-exfoliated layer is consistent with results from other materials. After transfer, these structures exhibited no strain and exhibited high crystal quality (as determined by double crystal x-ray topography and triple axis x-ray diffraction).