Wafer bonding for microsystems technologies

Gösele, U.; Tong, Qiaoling; Schumacher, Andreas; Kräuter, Gertrud; Reiche, M.; Plößl, A.; Kopperschmidt, P.; Lee, T.-H.; Kim, W.-J.

doi:10.1016/s0924-4247(98)00310-0

Cited by 68 publications

(33 citation statements)

References 41 publications

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“…The large number of process parameters and the possibility of cross-over effects of these parameters could have required a very large set of prepared samples, whose preparation and characterization could have been beyond the time constrains of this study. To overcome this problem, a Design of Experiments (DOE) technique (JMP, SAS Ltd.) was applied, utilizing previous experience in Si-Si plasma assisted direct bonding processes to yield the minimal number of required experiments (8), whose parameters are given in Table 1.…”

Section: Sample Preparationmentioning

confidence: 99%

Low-temperature direct bonding of silicon nitride to glass

Pasternak

Paz

2018

RSC Adv.

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Direct bonding may provide a cheap and reliable alternative to the use of adhesives. While direct bonding of two silicon surfaces is well documented, not much is known about direct bonding between silicon nitride and glass. This is unfortunate since silicon nitride is extensively used as an anti-reflection coating in the PV industry, often in contact with a shielding layer made of glass. A series of bonding experiments between glass and SiN was performed. The highest bonding quality, manifested by the highest bonding energy and lowest void area, was obtained with pairs that had been activated by nitrogen plasma followed by post-contact thermal annealing at 400 C. HRTEM imaging, HRTEM-EDS and EELS measurements performed on the thin films prepared from bonded samples by Focused Ion Beam (FIB) revealed a clear defect-free interface between the silicon nitride and the glass, 4 nm in thickness. ATR FT-IR measurements performed on activated surfaces prior to contact indicated the formation of silanol groups on the activated glass surface and a thin oxide layer on the silicon nitride. An increase in the bearing ratio of the glass following activation was noticed by AFM. A mechanism for bonding silicon nitride and glass is suggested, based on generation of silanol groups on the glass surface and on oxidation of the silicon nitride surface. The results point out the importance of exposure to air, following activation and prior to bringing the two surfaces into contact.

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Section: Sample Preparationmentioning

confidence: 99%

Low-temperature direct bonding of silicon nitride to glass

Pasternak

Paz

2018

RSC Adv.

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“…Whispering gallery modes (WGMs) of microdisks resonators are efficient solutions for photon confinement as they exhibit low mode volumes and high-quality factors. In a previous paper [30], the coupling of such μdisks to silicon waveguides has been described so we have only reported the main results here. The active heterostructure with MQW was designed to emit at 1.5 μm and was grown by molecular beam epitaxy (MBE) on a 2-inch InP wafer.…”

Section: Fabrication Of Inp Microsources With Microelectronics Toolsmentioning

confidence: 99%

Development of Silicon Photonics Devices Using Microelectronic Tools for the Integration on Top of a CMOS Wafer

Fédéli

Cioccio

Marris‐Morini

et al. 2008

Advances in Optical Technologies

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Recommended by Pavel ChebenPhotonics on CMOS is the integration of microelectronics technology and optics components to enable either improved functionality of the electronic circuit or miniaturization of optical functions. The integration of a photonic layer on an electronic circuit has been studied with three routes. For combined fabrication at the front end level, several building blocks using a silicon on insulator rib technology have been developed: slightly etched rib waveguide with low (0.1 dB/cm) propagation loss, a high speed and high responsivity Ge integrated photodetector and a 10 GHz Si modulators. Next, a wafer bonding of silicon rib and stripe technologies was achieved above the metallization layers of a CMOS wafer. Last, direct fabrication of a photonic layer at the back-end level was achieved using low-temperature processes with amorphous silicon waveguide (loss 5 dB/cm), followed by the molecular bonding of InP dice and by the processing in microelectronics environment of InP μsources and detector.

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“…Microscopic roughness and macroscopic planarity of the wafers are important parameters for bonding. Note that any dust particle will introduce a defect, preventing bonding at least in a defect zone of radius R. A limit for the waviness or height distortions by particles or defects is given by a relation of the lateral extension R of a non-bonded (defect) area and the depth h of the defect zone arising from waviness [19]. In the case of large defects and small wafer thickness (R > 2d) the condition h < R 2 / 2E d 3 /(3γ) must be fulfilled for bonding, while in the case of thick wafers and small-scale defects (R < 2d) the critical height deviation is h < 3.6 √ Rγ/E .…”

Section: 2mentioning

confidence: 99%

Two-dimensional X-ray waveguides: fabrication by wafer-bonding process and characterization

et al. 2008

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The fabrication of two-dimensionally confining X-ray waveguides enables the generation of nanoscopic X-ray beams. First applications of such waveguides for lens-less holographic imaging have already been demonstrated, but were limited by the fabrication methods and the design. To overcome these limitations, we present here the fabrication process for a second generation of X-ray waveguide with air or vacuum as guiding channel, based on e-beam lithography, ion etching and subsequent wafer bonding. This is a first step towards waveguides fulfilling requirements of high transmission and high confinement, since the process can be scaled down to smaller channel dimensions from the present structures. We address the structuring method used and present results of first X-ray characterization at synchrotron beamlines, under two entirely different beam settings, corresponding to the coupling of a coherent beam and an incoherent beam. The use of X-rays for the investigation of condensed matter structure relies on the precise definition of X-ray beams, which are then used in scattering, imaging or spectroscopy experiments. Since high-resolution lenses in particular for hard X-rays are not available, most modern synchrotron beamlines and laboratory instruments use slits or pinholes to define the cross section of the X-ray beams. As the scattering volume or the sample size decreases in many applications to the nanometer range, beam definition at the nanoscale presents an entirely new challenge for X-ray science and technology. Already today, many imaging, spectroscopy and lithography experiments require the use of very small apertures (also called spatial filters in some microscopy techniques) with a cross section far in the sub-micron range for X-ray-beam definition. The spatial resolution of these techniques is limited by the cross-sectional dimensions of the available apertures; see for example lens-less X-ray Fourier transform holography [1] or proximity X-ray lithography [2]. In the limit of smaller and smaller cross sections, the beam-

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Wafer bonding for microsystems technologies

Cited by 68 publications

References 41 publications

Low-temperature direct bonding of silicon nitride to glass

Low-temperature direct bonding of silicon nitride to glass

Development of Silicon Photonics Devices Using Microelectronic Tools for the Integration on Top of a CMOS Wafer

Two-dimensional X-ray waveguides: fabrication by wafer-bonding process and characterization

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