W-band flip-chip assembled CMOS amplifier with transition compensation network for SiP integration

Kuo, Che-Chung; Lin, Po‐An; Lu, Hsin-Chia; Jiang, Yu-Sian; Liu, Chia‐Ming; Hsin, Yue-Ming; Wang, Huei

doi:10.1109/mwsym.2010.5518162

Cited by 4 publications

(3 citation statements)

References 5 publications

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“…A 90 nm CMOS PA flip-chipped on a ceramic substrate with compensation networks has been reported for W-band applications [5]. Our work shows for the first time the integration of millimeter-wave CMOS amplifiers with flipchip packaging fully encapsulated into the substrate at W band.…”

Section: Introductionmentioning

confidence: 92%

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A W-band CMOS PA encapsulated in an organic flip-chip package

Patterson

Dawn

Papapolymerou

2012

2012 IEEE/MTT-S International Microwave Symposium Digest

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This paper presents for the first time an organic Liquid Crystal Polymer (LCP) based system-on-package (SOP) module for a W-band CMOS power amplifier. The integrated circuit is flip-chipped and fully encapsulated into an all-LCP platform through construction of a cavity to host the chip. Additionally, a matching network is designed and implemented to improve broadband performance of the return loss and gain in the packaged die. Results show the encapsulated flip-chip package is attributed for 1.5 dB of loss in peak amplifier gain and only a slight degradation in return loss. Utilization of a matching network increased the packaged chip gain by 1.1 dB and significantly improved the return loss. This fully encapsulated packaged W-band 45-nm SOI CMOS PA achieves 5.0 dBm output power at 6.0 dB power gain and 5.2% PAE at 90 GHz with 1.0 V supply. To the best of the authors' knowledge, this is the highest performance demonstrated for a W-band CMOS PA on SOP module. Index Terms -CMOS integrated circuits, flip chip, integrated circuit packaging, liquid crystal polymer (LCP), organic materials, power amplifiers.

show abstract

Section: Introductionmentioning

confidence: 92%

“…Comprehensive research and prototypes have been published leading to the realization of millimeter-wave flipchip packaging on ceramic and lossy-silicon substrates [4][5]. A 90 nm CMOS PA flip-chipped on a ceramic substrate with compensation networks has been reported for W-band applications [5].…”

Section: Introductionmentioning

confidence: 99%

A W-band CMOS PA encapsulated in an organic flip-chip package

Patterson

Dawn

Papapolymerou

2012

2012 IEEE/MTT-S International Microwave Symposium Digest

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“…Flip-chip solder bumps have far lower inductance than bondwires and are therefore more suited for the transport of millimeter wave signals [5]. Moreover, flip-chipping provides a steadier connection, resulting in more reproducible measurements.…”

Section: Introductionmentioning

confidence: 99%

A fully micromachined double-slot waveguide-to-GCPW transition for 180–230 GHz MM-wave applications

Aliakbarian

Radiom

Vandenbosch

et al. 2014

2014 IEEE International Conference on Ultra-WideBand (ICUWB)

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This paper presents a fully micromachined doubleslot grounded coplanar waveguide (GCPW) to a fundamental rectangular waveguide transition for G-band applications. The designed waveguide-to-GCPW transition is optimized to achieve low loss. The insertion loss of the waveguide-to-CPW back-toback transition is better than -2.5 dB in a frequency range of 180 to 230 GHz frequency bandwidth, corresponding to more than 24% bandwidth. The structure's performance is also analyzed for fabrication sensitivity and possible misalignments.

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Packaging of High-Gain Multichip Module in Multilayer LCP Substrates at $W$ -Band

Zhang

Shi

Martin

et al. 2017

IEEE Trans. Compon., Packag. Manufact. Technol.

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W-band flip-chip assembled CMOS amplifier with transition compensation network for SiP integration

Cited by 4 publications

References 5 publications

A W-band CMOS PA encapsulated in an organic flip-chip package

A W-band CMOS PA encapsulated in an organic flip-chip package

A fully micromachined double-slot waveguide-to-GCPW transition for 180–230 GHz MM-wave applications

Packaging of High-Gain Multichip Module in Multilayer LCP Substrates at $W$ -Band

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W-band flip-chip assembled CMOS amplifier with transition compensation network for SiP integration

Cited by 4 publications

References 5 publications

A W-band CMOS PA encapsulated in an organic flip-chip package

A W-band CMOS PA encapsulated in an organic flip-chip package

A fully micromachined double-slot waveguide-to-GCPW transition for 180&#x2013;230 GHz MM-wave applications

Packaging of High-Gain Multichip Module in Multilayer LCP Substrates at $W$ -Band

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A fully micromachined double-slot waveguide-to-GCPW transition for 180–230 GHz MM-wave applications