2017
DOI: 10.1109/tcpmt.2017.2737550
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Packaging of High-Gain Multichip Module in Multilayer LCP Substrates at $W$ -Band

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Cited by 10 publications
(3 citation statements)
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“…In 2013, Chlieh et al integrated gallium nitride (GaN) amplifiers and microfluidic cooling in a multilayer LCP substrate for high-power applications at 5 GHz [114]. In 2017, Zhang et al developed an MCM integration and packaging approach in the W-band, achieving a high gain of 50 dB, a low noise figure of less than 6 dB, and a linear phase from 80 to 97 GHz [115]. Jiang et al reported on the use of LCP packages for miniaturized magnetoelastic resonators for tagging applications in 2019, expanding the application ranges of LCPs [116].…”
Section: Chip Integration and Packgingmentioning
confidence: 99%
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“…In 2013, Chlieh et al integrated gallium nitride (GaN) amplifiers and microfluidic cooling in a multilayer LCP substrate for high-power applications at 5 GHz [114]. In 2017, Zhang et al developed an MCM integration and packaging approach in the W-band, achieving a high gain of 50 dB, a low noise figure of less than 6 dB, and a linear phase from 80 to 97 GHz [115]. Jiang et al reported on the use of LCP packages for miniaturized magnetoelastic resonators for tagging applications in 2019, expanding the application ranges of LCPs [116].…”
Section: Chip Integration and Packgingmentioning
confidence: 99%
“…With a low bonding profile, i.e., small wire length and lift height, wire bonding can allow broadband low-loss properties up to 77 GHz [119] and narrowband low-loss properties up to 122 GHz [120]. Zhang developed V-shaped wire bonding techniques for the integration of wideband indium phosphide (InP) LNA on LCP substrates in 2017, achieving low insertion loss up to 110 GHz [115], as shown in Figure 9a. Due to the small interconnect profile, flip-chip bonding addresses the low loss by using gold balls or posts at mmW and THz frequencies [121][122][123][124].…”
Section: Integraion Technologiesmentioning
confidence: 99%
“…To achieve both high-performance and low-profile, the 3-dimensional (3-D) system-in-package (SiP) has been an attractive and efficient approach to produce MMW wireless systems [7,8,9,10]. At present, low temperature co-fired ceramic (LTCC) [11,12,13,14,15], highdensity interconnect (HDI) [16,17,18,19,20], and embedded wafer level ball grid array (eWLB) [21,22,23,24,25] have all been demonstrated for mass production of MMW SiPs. However, the selection for MMW SiP is a tradeoff among compactness, cost, electrical performance and thermo-mechanical reliability [26].…”
Section: Introductionmentioning
confidence: 99%