VSWR protection of power amplifiers using BST components

Ferretti, Jerome; Preis, Sebastian; Heinrich, W.; Bengtsson, Olof

doi:10.1109/gemic.2016.7461651

Cited by 7 publications

(5 citation statements)

References 9 publications

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“…In addition, intermediate impedances located at high VSWR can cause PA failures. Based on these facts, several solutions have been proposed, such as closed-loop protection techniques using collector current sensing circuit [10], as well as clamping circuits [1] and closed-loop technique using a collector voltage sensing circuit [1,[3][4][5][6][7][8][9]. However, as the power, voltage, and thermal In an HBT PA, a high collector voltage, which is much larger than the collector to emitter breakdown voltage, with the base open (BV CEO ), of a power transistor, had been considered as a main cause of PA failure under a mismatch condition.…”

Section: The Failure Mechanism In An Hbt Rf Pa Under a Mismatchmentioning

confidence: 99%

“…The PA can be damaged when a load mismatch occurs, therefore the PA's ruggedness was a main concern for Tx chain in mobile handsets. For this reason, many efforts were made to improve it and solutions for sufficient ruggedness were provided [1][2][3][4][5][6][7][8][9][10][11][12][13], including: Clamping circuit [1][2][3], resistive emitter ballasting [4], closed loop protection technique [1,[5][6][7][8][9][10], high voltage process, and so on. A general ruggedness requirement for PA-duplexer (PAD) modules is to have no damage or permanent performance degradation with a full RF input power drive under high load VSWR conditions at a maximum supply voltage.…”

Section: Introductionmentioning

confidence: 99%

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A Ruggedness Improved Mobile Radio Frequency Power Amplifier Module with Dynamic Impedance Correction by Software Defined Atomization

Jeon¹,

Kang

2019

Electronics

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A ruggedness improved multi-band radio frequency (RF) power amplifier (PA) module applicable to mobile handsets, which are required to survive against a serious load impedance change under extreme power and bias conditions, is presented. In this method, the load impedance of PA is adaptively adjusted with a digitally controlled impedance corrector to keep the PA safe by performing a load mismatch detection. The impedance mismatch detector, impedance corrector, and other RF switches were all integrated into a single integrated circuit (IC) using silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS). For the verification purpose, a 2-stage hetero junction bipolar transistor (HBT) PA module adopting this method was fabricated. At a frequency of 1915 MHz, a collector bias voltage of 4.2 V, and over a wider range of load impedance variation between a VSWR of 1 and a VSWR of 5.5, it did not fail. When this technique was not applied with a voltage standing wave ratio (VSWR) range of 1 to 4, it resulted in an acceptable RF performance degradation of 1% power added efficiency (PAE) in envelope tracking (ET) mode. Moreover, it survived at a bias voltage 1V larger than when the technique was not applied for the same mismatch condition.

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Section: The Failure Mechanism In An Hbt Rf Pa Under a Mismatchmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Ruggedness Improved Mobile Radio Frequency Power Amplifier Module with Dynamic Impedance Correction by Software Defined Atomization

Jeon¹,

Kang

2019

Electronics

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“…1. Few available sensing mechanisms typically are power and VSWR sensing [8][9][10], however, this is an expensive solution and requires huge size area. For instance, power sensing approach needs RF sampling circuitry and RF to low frequency converter [10].…”

Section: Circuit Principlementioning

confidence: 99%

“…The varactor bias voltage of up to 20 V can sustain an output VSWR levels of 30:1. The PA delivers 47 dBm output power at a maximum PAE of 49% [8]. In an another work, a low power, low voltage RF/analogue frond end architecture for LF RFID tags with a dynamic power sensing scheme is introduced.…”

Section: Introductionmentioning

confidence: 99%

Technique to characterise transient behavioural of multistage RF power amplifier for two‐way radio applications

Anand

Kumar²,

Kanesan³

2017

IET Circuits, Devices & Systems

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A new technique to characterise the behavioral response of multistage RF power amplifier (PA) is presented. A simplified design methodology of closed loop PA with DC current sensing of multistage PA (cascaded) and voltage shaping algorithm is introduced in this study. An accurate characterisation of transient behavioral which includes ramping of RF energy from noise level to steady state level and adjacent channel transient power (ACTP), shows a high degree of correlation with measurement level for wideband RF PA operation (400-520 MHz). A prototype board is fabricated and measurement results demonstrated good correlation with transient behavioral model simulation. On board measurements demonstrated transient timing response of 1 ms while maintaining good ACTP of less than-60 dB over the wide frequency range of 400-520 MHz.

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“…In previous generations of handsets, it was general to implement an isolator between the PA module and the handset antenna in order to isolate the amplifier from changes in impedance at the antenna port, which is incompatible with modern handsets due to the size and cost limits [1]. Other solutions including improved process [2,3], resistive emitter ballasting [4], and various open-loop/closed-loop techniques [5][6][7][8][9][10][11][12] have been proposed. Among these solutions, the closed-loop techniques have been developed in various configurations according to the sensing object and the feedback form.…”

Section: Introductionmentioning

confidence: 99%

Software-Based Adaptive Protection Control against Load Mismatch for a Mobile Power Amplifier Module

Jeon¹,

Jung

Kang

2019

Electronics

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A closed-loop protection method for a radio frequency (RF) power amplifier (PA) module applicable to mobile handsets has been introduced. The load impedance of the PA was adaptively sensed by an embedded impedance detector which was digitally controlled and the system adjusted PA power using a feedback circuit to keep the PA safe based on a load mismatch detection. For verification, a two-stage hetero junction bipolar transistor (HBT) PA module for handsets was fabricated and tested against load mismatch. Measurement results showed that the technique could help PA survive at a 0.5V larger collector bias voltage condition than when the technique was not applied for the same mismatch condition with an acceptable RF performance degradation at nominal condition.

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VSWR protection of power amplifiers using BST components

Cited by 7 publications

References 9 publications

A Ruggedness Improved Mobile Radio Frequency Power Amplifier Module with Dynamic Impedance Correction by Software Defined Atomization

A Ruggedness Improved Mobile Radio Frequency Power Amplifier Module with Dynamic Impedance Correction by Software Defined Atomization

Technique to characterise transient behavioural of multistage RF power amplifier for two‐way radio applications

Software-Based Adaptive Protection Control against Load Mismatch for a Mobile Power Amplifier Module

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