VPE grown PIN-like visible photodiodes

Lour, Wen‐Shiung; Chang, Chung‐Cheng

doi:10.1016/0038-1101(96)00033-0

Cited by 12 publications

(7 citation statements)

References 11 publications

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“…The barrier height was determined by measuring the reverse saturation current (I o ) through the junction at different temperature from 323 to 303 K. The reverse saturation current flowing through junction is related to temperature as, 22,23,27 2 0…”

Section: Barrier Height Measurementsmentioning

confidence: 99%

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Photovoltaic Solar Application Study of Cu0.5Zn0.5Se Thin Films by Chemical Bath Deposition Method

Rathod¹,

Sanadi²,

Kamble³

et al. 2022

Mat. Res.

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Inorganic ternary type materials are induced compound is worked as fundamental applications in transformation of the solar light energy into electrical energy. Copper zinc selenide thin films have been synthesized by chemical bath deposition method on to stainless steel plate. The configuration of fabricated cell is p-Cu 0.5 Zn 0.5 Se| NaOH(1M) + S(1M) + Na 2 S(1M) |C (graphite) . The Photovoltaic cell characterization of the films is carried out by studying current-voltage characteristics in dark, capacitance-voltage in dark, barrier height measurements, power output, photoresponse and spectral response. The study shows that Cu 0.5 Zn 0.5 Se thin films are p-type conductivity. The junction ideality factor was found to be 2.93. The flat band potential was found to be -0.708V. The barrier height value was found to be 0.186 eV. The study of power output characteristic shows open circuit voltage, short circuit current, fill factor and efficiency were found to be 150 mV, 21 μA, 42.13%, and 0.63%, respectively. Photoresponse shows lighted ideality factor is 2.89. Spectral response shows the maximum current observed at 580 nm.

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Section: Barrier Height Measurementsmentioning

confidence: 99%

“…All these effects are responsible for band bending observed in the semiconductor electrode. The nature of plot suggests the presence of two regions corresponding to shallow and deep donor levels 27 . Intercepts of plots on voltage axis determine the flat band potential value.…”

mentioning

confidence: 99%

Photovoltaic Solar Application Study of Cu0.5Zn0.5Se Thin Films by Chemical Bath Deposition Method

Rathod¹,

Sanadi²,

Kamble³

et al. 2022

Mat. Res.

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“…II-VI compounds are of potential interest for photovoltaic and optoelectronic device application in UV to IR region owing to their direct band gap, which span over the entire visible region of the spectrum and high absorption coefficient (Fahrenbruch 1977;Chu and Chu 1995;Lour and Chang 1996;Neumark 1997;Le Meur et al 1998;Chang and Lii 1998). Among II-VI compounds, CdTe is one of the extensively studied materials, particularly for photovoltaic (PV) application.…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of vacuum-deposited p-CdTe/n-ZnSe heterojunctions

2015

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In this paper, we report a heterojunction of p-CdTe/n-ZnSe fabricated on a quartz substrate using thermal evaporation technique. The materials have a larger band gap difference in comparison to other II-VI heterojunctions-involving CdTe. The larger band gap difference is expected to increase diffusion potential and photovoltaic conversion efficiency. The electrical conduction mechanism involved, barrier height and band offset at the interface that are crucial to determine device performance are evaluated using electrical characterization of heterojunction. The junction exhibited excellent rectification behavior with an estimated barrier height of 0.9 eV.

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“…For earlier technology nodes, chip RC-delay was mostly governed by Front End of Line (FEOL) CMOS transistor drive capacitance and load resistance. With device scaling, the need for reducing BEOL RC-delay became increasingly important [1][2][3]. Starting at the 0.25 μm technology node, new materials had to be introduced in Si technology to continue improving the performance of ultra large scale integrated (ULSI) circuits.…”

Section: Introductionmentioning

confidence: 99%

Ultrathin (8-14 nm) Conformal SiN for sub-20 nm Copper/Low-k Interconnects

et al. 2014

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A multilayer SiN barrier film with high breakdown field and low leakage current is developed for Cu low-k interconnects and is compared with the SiCNH barrier film used in previous technology nodes. Ultrathin SiN barrier cap films also provide high conformality and fill recessions in Cu lines as observed after CMP. The conformal ultrathin (8-14 nm) multilayer SiN cap is robust with higher breakdown field, lower leakage and forms a good oxidation barrier. The electromigration activation energy for a SiN cap layer of 10-12 nm dielectric thickness is about 0.9 eV.

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VPE grown PIN-like visible photodiodes

Cited by 12 publications

References 11 publications

Photovoltaic Solar Application Study of Cu0.5Zn0.5Se Thin Films by Chemical Bath Deposition Method

Photovoltaic Solar Application Study of Cu0.5Zn0.5Se Thin Films by Chemical Bath Deposition Method

Electrical characterization of vacuum-deposited p-CdTe/n-ZnSe heterojunctions

Ultrathin (8-14 nm) Conformal SiN for sub-20 nm Copper/Low-k Interconnects

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