Photovoltaic solar thin films zinc telluride studies on chemically deposited have been carried out to assess its suitability for use in the conversion of solar energy to electrical energy. The configuration of fabricated cell is n-ZnTe| NaOH (0.1M) + S (0.1M) + Na 2 S (0.1M)|C (graphite) . The study shows that ZnTe thin films are n-type conductivity. The junction ideality factor was found to be 2.87. The flat band potential is found to be −0.652 V. The barrier height value was found to be 0.583 eV. The study of the power output characteristic shows open circuit voltage, short circuit current, fill factor and efficiency were found to be 150 mV, 25.6 μA, 24.86% and 0.49%, respectively. The photovoltaic cell characterization of the thin films is carried out by studying current-voltage characteristics in dark, capacitance-voltage in dark, barrier height measurements, power output characteristics.
Inorganic ternary type materials are induced compound is worked as fundamental applications in transformation of the solar light energy into electrical energy. Copper zinc selenide thin films have been synthesized by chemical bath deposition method on to stainless steel plate. The configuration of fabricated cell is p-Cu 0.5 Zn 0.5 Se| NaOH(1M) + S(1M) + Na 2 S(1M) |C (graphite) . The Photovoltaic cell characterization of the films is carried out by studying current-voltage characteristics in dark, capacitance-voltage in dark, barrier height measurements, power output, photoresponse and spectral response. The study shows that Cu 0.5 Zn 0.5 Se thin films are p-type conductivity. The junction ideality factor was found to be 2.93. The flat band potential was found to be -0.708V. The barrier height value was found to be 0.186 eV. The study of power output characteristic shows open circuit voltage, short circuit current, fill factor and efficiency were found to be 150 mV, 21 μA, 42.13%, and 0.63%, respectively. Photoresponse shows lighted ideality factor is 2.89. Spectral response shows the maximum current observed at 580 nm.
Chalcogenides II-VI group of crystalline material zinc tellurium thin films have been synthesized by chemical bath deposition (CBD) method in which glass substrates have been used for deposition technique in presence of triethanolamine solution. The as-synthesized films were characterization by X-ray diffraction scanning electron microscopy (XRD), optical spectroscopy and thermoelectric techniques. The deposited material was orthorhombic in shape. The 2.01 eV is the optical band gap energy of the sample and the electrical conductivity of the thin film was originating in the order of 10-8 (Ω cm)-1, which showed n-type thermoelectrical conductivity. The solar cell can be represented as a n-ZnTe|NaI (0.1M) + I2 (0.1M)|C(graphite). The solar efficiency of the cell was found to be 1.03%.
Solar cell technology comes with unique temperature coefficients. These temperature coefficients are important and temperature of the solar cell has direct influence on the power output of a photovoltaic cells. CdTe is a very robust and chemically stable material and for this reason its related solar cell. Thin film photovoltaic technology is now the only thin film technology in the first top 10 producers in the world. The strong improvement in efficiency in the last 7 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell. In this paper, we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. The configuration of fabricated cell is n-CdTe/NaOH (0.15 M) + S (0.15 M) + Na 2 S (0.15 M)/C (graphite) . The junction ideality factor was found to be 2.63, 2.13, and 1.89. The flat band potential is found to be −0.400, −0.450, −0.501 V. The barrier height value was found to be 0.523, 0.487, and 0.436 eV. The study of power output characteristic shows open circuit voltage, short circuit current, fill factor and efficiency were found to be 120 mV, 24.2 μA, 32.68%, 26.18%, and 19.73% and 0.63%, 0.37%, and 0.23%, respectively. The lighted ideality factor was calculated and found to be 3.26, 1.87, and 1.17. Spectra attain maximum value of current at λ = 580 nm and decrease with increase in wavelength. The photovoltaic cell characterization of the thin films is carried out by studying current-voltage characteristics in dark, capacitance-voltage in dark, barrier height measurements, power output characteristics.
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