Electrical characterization of vacuum-deposited p-CdTe/n-ZnSe heterojunctions

Abstract

In this paper, we report a heterojunction of p-CdTe/n-ZnSe fabricated on a quartz substrate using thermal evaporation technique. The materials have a larger band gap difference in comparison to other II-VI heterojunctions-involving CdTe. The larger band gap difference is expected to increase diffusion potential and photovoltaic conversion efficiency. The electrical conduction mechanism involved, barrier height and band offset at the interface that are crucial to determine device performance are evaluated using electrical characterization of heterojunction. The junction exhibited excellent rectification behavior with an estimated barrier height of 0.9 eV.

Influence of Silicon Nanoparticle on the Electrical Properties of Heterostructured CdTe/CdS thin films based Photovoltaic Device

“…The suitability of CdS thin film as a good window layer material capable of providing excellent receptive surface to absorber layer materials such as p-type cadmium telluride (CdTe), p-type copper indium selenide (CuInSe2), etc is owned to its high electron affinity [3]. Despite the potential of CdS in the formation of heterojunction based solar cells, there is need to treat its surface for better receptive surface which offer better improvement on the electrical parameters of the photovoltaic solar cells [4][5][6]. CdTe thin film as one of the primary candidates in the field of photovoltaic technology has gained worldwide prominence owning to its near ideal bandgap energy of 1.45 eV for the absorption of photons [6].…”

Precision Modeling: Application of Metaheuristics on Current–Voltage Curves of Superconducting Films

“…Precisely measuring critical current density in superconducting materials and systems requires understanding of the fundamentals of current-voltage (IV) characteristics, also called the transport measurements [1]. Recent studies have shown that these IV curves may show sudden jumps, which resemble Shapiro steps, in voltage around critical current (I c ) and/or critical temperature (T c ) in superconducting thin films.…”