An Al/p-AgGaTe 2 polycrystalline thin film schottky barrier diode have been prepared by flash-evaporation of p-AgGaTe 2 onto a pre-deposited film of aluminium. The current-voltage, capacitance-voltage and photoresponse of the diode have been investigated. The important physical parameter such as barrier height of the fabricated diode was derived from these measurements.
Thin films have been prepared by flash evaporation technique of a stoichiometric bulk of AgGaTe 2 compound in vacuum and analysed using X-ray diffraction, transmission electron microscopy, selected area diffraction and energy dispersive analysis of X-rays. The effect of substrate temperature on the structural propertiesgrain size, film orientation, composition, and stoichiometry of the films have been studied. It was found that the polycrystalline, stoichiometric films of AgGaTe 2 can be grown in the substrate temperature range of 473K < Ts < 573K. The influence of substrate temperature (Ts) on the electrical characteristics-Resistivity, Hall Mobility, Carrier concentration of AgGaTe 2 thin films were studied. The electrical resistivity was found to decrease with increase in substrate temperature up to 573K and then increases. The variation of activation energy of AgGaTe 2 thin films were also investigated. The implications are discussed.
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