Voltage Scaling in Area Scalable Selector-Less PrMnO3 RRAM by N<sub>2</sub>: O<sub>2</sub> Partial Pressure Dependent Annealing

Lashkare, Sandip; Sakhuja, Jayatika; Ganguly, Udayan

doi:10.1109/inec.2019.8853856

Cited by 4 publications

(2 citation statements)

References 19 publications

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“…The shallow-trap occupancy follows Boltzmann distribution and the corresponding I−V characteristics change from ohmic (α ≈ 1) to trap-SCLC (α ≈ 2) followed by trap-filled limit (α > 2) and trap-free SCLC (α ≈ 2). 42 However, in the presence of deep trap states, trap occupancy factor follows the Fermi−Dirac distribution and in that case, the corresponding I−V characteristics of the material directly change from ohmic (α ≈ 1) to trap-filled limit (α > 2) followed by a trap free-SCLC (α ≈ 2).…”

Section: Space Charge Limited Current (Sclc)mentioning

confidence: 99%

Sensitivity of ZnO Film-Based X-ray Sensors: A Comprehensive Study on the Effect of Thickness of ZnO Layer

Das,

Kalita

2024

ACS Appl. Mater. Interfaces

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For all types of photosensors, efficient absorption of photons of particular interest is very essential. We report the effect of thickness of the ZnO layer in ZnO film-based X-ray sensors. A set of five samples Z1, Z2, Z3, Z4, and Z5 is developed by varying the thickness of the ZnO layer between 10 and 73 μm. The dark I−V characteristics of the sensors show a "pseudorectifying" type nature. A quantitative analysis of the dark currents reveals that the dark I−V characteristics are affected by space charge limited current (SCLC) due to intrinsic defects present in the ZnO films. The effect of the SCLC is prominent in the thicker films in comparison to the thinner ones. The sensors show high signal-tonoise (S/N) ratio below 5.0 V bias voltage. The S/N ratio is found to increase with the thickness of the ZnO layer due to efficient absorption of X-ray photons. The photoresponse characteristics of the sensors against dose rate are sublinear between 0.015 and 0.234 Gy/s. The photoresponse time of the sensors are found to be nearly 1 s. The sensitivities of Z1, Z2, Z3, Z4, and Z5 sensors at 4.5 V bias voltage for 0.234 Gy/s dose rate are estimated to be 55. 51, 337.08, 312.01, 152.81, and 103.52 μC/Gy cm 3 , respectively. The sensitivity of the device is found to increase with increase in thickness of the ZnO layer and reaches an optimum level for the thickness of about 19−26 μm. Beyond this range, the sensitivity is found to decrease due to the Schubweg effect.

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Section: Space Charge Limited Current (Sclc)mentioning

confidence: 99%

Sensitivity of ZnO Film-Based X-ray Sensors: A Comprehensive Study on the Effect of Thickness of ZnO Layer

Das,

Kalita

2024

ACS Appl. Mater. Interfaces

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“…The PMO film is amorphous in an as-deposited state. In order to crystallize the PMO film, annealing is done in the controlled environment of N 2 : O 2 partial pressures (95:05) at 750°C for 30 seconds [16]. Further, through UV photolithography, different top contact areas are patterned on PMO film.…”

Section: Device Fabricationmentioning

confidence: 99%

Investigating Transient Characteristics of Volatile Hysteresis and Self-Heating of PrMnO₃-Based RRAM

Sakhuja

Lashkare

Jana

et al. 2020

IEEE Trans. Electron Devices

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𝐏𝐫𝐌𝐧𝐎 𝟑 (PMO) based RRAM shows selector-less behavior due to high-non-linearity. Recently, the non-linearity, along with volatile hysteresis, is demonstrated and utilized as a compact oscillator to enable highly scaled oscillatory neurons, which enable oscillatory neuromorphic systems found in the human cortex. Hence, it is vital to understand the physical mechanisms behind such a volatile hysteretic behavior to provide useful insights in developing a device for various neuromorphic applications. In this paper, we present a comprehensive investigation of the transient characteristics and propose a physical mechanism to replicate the observations by simulations. First, we investigate the complex dynamics of the hysteresis with the voltage ramp rate. We observe that the voltage window initially increases and later decreases as the ramp rate is increased -while the current window reduces monotonically. Second, an analytical electrothermal model based on space charge limited current (SCLC) and Fourier Heat equation is proposed to model the co-dependent heat and current flow. Finally, we show that the interplay between the self-heating due to the current and the current dependence on the temperature is accurately modeled to reproduce the hysteresis dependence on the various voltage ramp rate. Such a detailed understanding of the device PMO RRAM volatile hysteresis may enable efficient device design required in neuromorphic computing applications.

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Integration of Non-Filamentary Pr_0.7Ca_0.3MnO₃– Based Memristor With Silicon-PN Junction

Sakhuja

Rowtu

Patil

et al. 2023

IEEE Electron Device Lett.

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Voltage Scaling in Area Scalable Selector-Less PrMnO3 RRAM by N₂: O₂ Partial Pressure Dependent Annealing

Cited by 4 publications

References 19 publications

Sensitivity of ZnO Film-Based X-ray Sensors: A Comprehensive Study on the Effect of Thickness of ZnO Layer

Sensitivity of ZnO Film-Based X-ray Sensors: A Comprehensive Study on the Effect of Thickness of ZnO Layer

Investigating Transient Characteristics of Volatile Hysteresis and Self-Heating of PrMnO₃-Based RRAM

Integration of Non-Filamentary Pr_0.7Ca_0.3MnO₃– Based Memristor With Silicon-PN Junction

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Voltage Scaling in Area Scalable Selector-Less PrMnO3 RRAM by N2: O2 Partial Pressure Dependent Annealing

Cited by 4 publications

References 19 publications

Sensitivity of ZnO Film-Based X-ray Sensors: A Comprehensive Study on the Effect of Thickness of ZnO Layer

Sensitivity of ZnO Film-Based X-ray Sensors: A Comprehensive Study on the Effect of Thickness of ZnO Layer

Investigating Transient Characteristics of Volatile Hysteresis and Self-Heating of PrMnO3-Based RRAM

Integration of Non-Filamentary Pr0.7Ca0.3MnO3– Based Memristor With Silicon-PN Junction

Contact Info

Product

Resources

About

Voltage Scaling in Area Scalable Selector-Less PrMnO3 RRAM by N₂: O₂ Partial Pressure Dependent Annealing

Investigating Transient Characteristics of Volatile Hysteresis and Self-Heating of PrMnO₃-Based RRAM

Integration of Non-Filamentary Pr_0.7Ca_0.3MnO₃– Based Memristor With Silicon-PN Junction