VO2 thin film based highly responsive and fast VIS/IR photodetector

Light-Sensing Properties of Amorphous Vanadium Oxide Films Prepared by RF Sputtering

“…The heterostructure based on the film obtained in the richest O 2 atmosphere achieved the maximum values of R~13 mA/W, D*~1.7 10 6 Jones and LDR~20 dB, respectively. The responsivity range is similar with other reports on V x O y materials [ 24 , 25 , 40 ] and makes the heterostructures compelling for NIR photodetection applications [ 41 ]; however, high voltage bias is also required. The observed dark current reached a value of 1 mA leading to decreased detectivity.…”

“…In this study we investigate the relationship between the deposition Ar:O 2 flow rate and the thin films’ structure and stoichiometry, pointing out that the increased oxygen content in the deposition process leads to a transition from the VO 2 to the V 2 O 5 phase, which further affects the light-sensing properties of V x O y thin films. Also, we show that the responsivity, detectivity and linear dynamic range parameters of the heterostructures with different V x O y amorphous films increase with the O/V ratio, reaching comparable values with recently published results for photodetectors based on crystalline VO 2 [ 24 ] or V 2 O 5 [ 25 ].…”

Synthesis, metal–insulator transition, and photoresponse characteristics of VO2 nanobeams via an oxygen inhibitor-assisted vapor transport method

“…The R l and t exhibited by our device compared well with those reported values. [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32] The working principle of the photodetector can be perceived from the point view of a traditional photocarrier transport process. 19 Upon illuminating the photodetector with photon energy of 532 nm-2.33 eV, and 1550 nm-0.8 eV higher than the energy gap of VO 2 (0.6-0.7 eV), photocarriers (excitons) were generated and separated by the applied external bias, resulting in an enhanced channel current and causing an efficient photoresponse.…”

“…In addition to temperature, other external stimuli, including electric field, 6 magnetic field, 7 intense illumination, 8 and strain energy, 9 can all cause a phase transition in VO 2 . Because of this reversible transition, VO 2 is a promising candidate for a wide range of applications, including ultrafast optical switches, 10 smart windows, 11 memory devices, 12 and photodetectors, [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32] as well as stress and gas sensors. 33,34 Comparison of the percolative nature of MIT in the VO 2 bulk or thin film revealed that the one-dimensional (1D) VO 2 morphology offers an appealing alternative for various device applications because of its single-crystal structure with an homogeneous phase and dislocation-free volume along with homogeneous domains.…”

Visible and Infrared Photoresponse in (V0.99Cr0.01)2O3 Epitaxial Films

“…These properties are highly dependent on crystallographic structure, crystal field splitting, and hybridization between O 2 p and V 3 d bands. [11,12] So far, various types of vanadium oxides, such as V 2 O 3 , [13][14][15] VO 2 , [16][17][18][19] and V 2 O 5 , [20][21][22] have been investigated to explore potential technological applications, and it is reported that VO 2 and V 2 O 5 can respond to ultraviolet (UV) light, which is expected to be solar blind or vacuum-UV detectors. [23][24][25][26][27] In particular, doped V 2 O 3 has attracted great attention in making high-performance electrodes.…”