Synthesis, metal–insulator transition, and photoresponse characteristics of VO<sub>2</sub> nanobeams <i>via</i> an oxygen inhibitor-assisted vapor transport method

Guo, Xitao; Hu, Yupei; Liu, Xin; Zafar, Zainab; Zhou, Weiping; Liu, Xingyu; Lin, Feng; Zou, Ji‐Jun; Nan, Haiyan

doi:10.1039/d2tc05295d

Cited by 3 publications

(1 citation statement)

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“…Vanadium dioxide (VO 2 ) has attracted considerable amounts of attention recently as a strong electron-correlated material since it exhibits a reversible metal-insulator transition (MIT) at a crucial temperature (T MIT ) of about 340 K. 1 This transition of VO 2 , which transforms it from its low-temperature insulating monoclinic phase to the high-temperature metallic rutile phase, correlates with a significant jump in resistance of 3-5 orders of magnitude and a significant variation in optical transmittance, particularly at near-infrared wavelengths. 2,3 VO 2 materials and devices have intriguing applications in smart windows, 4 optical and electrical switches, 5,6 photodetectors, 7,8 and chemical sensors 9,10 attributed to the extraordinary electrical and optical switching features established at the MIT. The Mott transition, which is driven by electron-electron interactions, and the Peierls transition, corresponding to the transformation of the lattice (electron-lattice coupling), 11 have been the two primary mechanisms employed to explain the microscopic origin of MIT in VO 2 .…”

Section: Introductionmentioning

confidence: 99%

Effects of oxygen vacancies and interfacial strain on the metal–insulator transition of VO₂ nanobeams

Guo,

Liu,

Zafar

et al. 2024

Phys. Chem. Chem. Phys.

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Section: Introductionmentioning

confidence: 99%

Effects of oxygen vacancies and interfacial strain on the metal–insulator transition of VO₂ nanobeams

Guo,

Liu,

Zafar

et al. 2024

Phys. Chem. Chem. Phys.

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Exploring the Magnetism and Magnetocaloric Effect of W‐Doped VO₂ Based on J₁–J₂ Ising Model

Liu,

Shi,

Zhu

et al. 2023

Physica Status Solidi (b)

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W‐doped VO2 exhibits a significant reduction in the metal–insulator transition temperature. In this study, the authors aim to investigate the magnetic influences of different proportions of W doping in VO2 with a rutile structure, using the J1–J2 model. The J1 and J2 values are calculated as 1.21 and −0.024 eV, respectively, using the generalized gradient approximation (GGA)+U method. Additionally, the J1–J2 model without W doping (x = 0) is simulated using the Ising model, and the obtained phase transition temperature of approximately 361 K closely matches the temperature calculated by Zheng et al. based on the spin dimer model. Furthermore, employing this model, the magnetization curves and magnetic entropy change (ΔS) are simulated for different W doping levels (x = 0–0.2). Through comprehensive analysis, it is found that the system exhibits the most promising research potential at a doping level of x = 0.12. These findings deepen the understanding of the mechanisms underlying the magnetic effects of W‐doped VO2 and provide a theoretical model guidance for future development of vanadium oxide materials.

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Metal-insulator transition effect on Graphene/VO$$_\text {2}$$ heterostructure via temperature-dependent Raman spectroscopy and resistivity measurement

Lerttraikul,

Rattanasakuldilok,

Pakornchote

et al. 2024

Sci Rep

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High-quality VO$$_2$$ 2 films were fabricated on top of c-Al$$_2$$ 2 O$$_3$$ 3 substrates using Reactive Bias Target Ion Beam Deposition (RBTIBD) and the studies of graphene/VO$$_2$$ 2 heterostructure were conducted. Graphene layers were placed on top of $$\sim$$ ∼ 50 and $$\sim$$ ∼ 100 nm VO$$_2$$ 2 . The graphene layers were introduced using mechanical exfoliate and CVD graphene wet-transfer method to prevent the worsening crystallinity of VO$$_2$$ 2 , to avoid the strain effect from lattice mismatch and to study how VO$$_2$$ 2 can affect the graphene layer. Slight increases in graphene/VO$$_2$$ 2 T$$_\text {MIT}$$ MIT compared to pure VO$$_2$$ 2 by $$\sim$$ ∼ 1.9 $$^{\circ }$$ ∘ C and $$\sim$$ ∼ 3.8 $$^{\circ }$$ ∘ C for CVD graphene on 100 and 50 nm VO$$_2$$ 2 , respectively, were observed in temperature-dependent resistivity measurements. As the strain effect from lattice mismatch was minimized in our samples, the increase in T$$_\text {MIT}$$ MIT may originate from a large difference in the thermal conductivity between graphene and VO$$_2$$ 2 . Temperature-dependent Raman spectroscopy measurements were also performed on all samples, and the G-peak splitting into two peaks, G$$^{+}$$ + and G$$^{-}$$ - , were observed on graphene/VO$$_2$$ 2 (100 nm) samples. The G-peak splitting is a reversible process and may originates from in-plane asymmetric tensile strain applied under the graphene layer due to the VO$$_2$$ 2 phase transition mechanism. The 2D-peak measurements also show large blue-shifts around 13 cm$$^{-1}$$ - 1 at room temperature and slightly red-shifts trend as temperature increases for 100 nm VO$$_2$$ 2 samples. Other electronic interactions between graphene and VO$$_2$$ 2 are expected as evidenced by 2D-peak characteristic observed in Raman measurements. These findings may provide a better understanding of graphene/VO$$_2$$ 2 and introduce some new applications that utilize the controllable structural properties of graphene via the VO$$_2$$ 2 phase transition.

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Synthesis, metal–insulator transition, and photoresponse characteristics of VO₂ nanobeams via an oxygen inhibitor-assisted vapor transport method

Abstract: Vapor transport technique is comprehensively employed methods for synthesizing monoclinic VO2 nanostructures to exploit the intrinsic metal-insulator transition (MIT) of VO2. However, to precisely control the growth characteristics such as...

Cited by 3 publications

References 65 publications

Effects of oxygen vacancies and interfacial strain on the metal–insulator transition of VO₂ nanobeams

Effects of oxygen vacancies and interfacial strain on the metal–insulator transition of VO₂ nanobeams

Exploring the Magnetism and Magnetocaloric Effect of W‐Doped VO₂ Based on J₁–J₂ Ising Model

Metal-insulator transition effect on Graphene/VO$$_\text {2}$$ heterostructure via temperature-dependent Raman spectroscopy and resistivity measurement

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Synthesis, metal–insulator transition, and photoresponse characteristics of VO2 nanobeams via an oxygen inhibitor-assisted vapor transport method

Abstract: Vapor transport technique is comprehensively employed methods for synthesizing monoclinic VO2 nanostructures to exploit the intrinsic metal-insulator transition (MIT) of VO2. However, to precisely control the growth characteristics such as...

Cited by 3 publications

References 65 publications

Effects of oxygen vacancies and interfacial strain on the metal–insulator transition of VO2 nanobeams

Effects of oxygen vacancies and interfacial strain on the metal–insulator transition of VO2 nanobeams

Exploring the Magnetism and Magnetocaloric Effect of W‐Doped VO2 Based on J1–J2 Ising Model

Metal-insulator transition effect on Graphene/VO$$_\text {2}$$ heterostructure via temperature-dependent Raman spectroscopy and resistivity measurement

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Synthesis, metal–insulator transition, and photoresponse characteristics of VO₂ nanobeams via an oxygen inhibitor-assisted vapor transport method

Effects of oxygen vacancies and interfacial strain on the metal–insulator transition of VO₂ nanobeams

Effects of oxygen vacancies and interfacial strain on the metal–insulator transition of VO₂ nanobeams

Exploring the Magnetism and Magnetocaloric Effect of W‐Doped VO₂ Based on J₁–J₂ Ising Model