Visible and Infrared Photoresponse in (V_0.99Cr_0.01)₂O₃ Epitaxial Films

Abstract

Herein, an infrared (IR) photodetector has been demonstrated by depositing the (V0.99Cr0.01)2O3 films on top of a sapphire (Al2O3) wafer. The photoresponse properties, including photocurrent, voltage, responsivity, and response speed, at different temperatures and wavelengths are explored. The results showed that the deposited samples produce a significant photoresponse in the near‐IR (NIR) light. In particular, as temperature increases from 298 K (25 °C) to 453 K (180 °C), the responsivity of (V0.99Cr0.01)2O3 films improves from 7.4 to 49.4 mA W−1 under 5 V biased 940 nm laser irradiation, and it holds the quick response for about 5 s. The findings indicate that (V0.99Cr0.01)2O3 film is a promising candidate material for IR photodetector and temperature‐dependent optical delay triggers.