Visible-light photoresponse of AlN-based film bulk acoustic wave resonator

Zhou, Changjian; Yang, Yi; Shu, Yi; Cai, Hualin; Ren, Tian‐Ling; Chan, Mansun; Zhou, Jian; Jin, Hao; Dong, Shurong; Yang, Cary Y.

doi:10.1063/1.4807135

Cited by 17 publications

(6 citation statements)

References 12 publications

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“…1e), the pattern displays several concentric circles, revealing that the This journal is © The Royal Society of Chemistry 2014 films contain polycrystalline grains and the crystalline quality for the as-grown AlN films is quite poor. 5 In addition, in this study, we also obtained the in-plane epitaxial relationships of AlN[112 ¯0]//Al [11 ¯0] between AlN and Al.…”

Section: Resultsmentioning

confidence: 99%

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Epitaxial growth of high quality AlN films on metallic aluminum substrates

et al. 2014

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AlN (0001) epitaxial films have been grown on Al (111) substrates with an in-plane epitaxial relationship of AlN[112 ¯0]//Al[11 ¯0] by pulsed laser deposition. The as-grown AlN films grown at 450 °C exhibited a very smooth and flat surface with a surface rootmean-square roughness less than 1.1 nm. There is no interfacial layer existing between AlN films and Al substrates, indicating an abrupt interface. The as-grown ~302 nm thick AlN films are almost fully relaxed only with an in-plane compressive strain of 0.16%. With the increase in growth temperature, the interfacial layer thickness increases, resulting in the degradation in the crystalline quality of the as-grown AlN films. These AlN films are of great interest for the commercial development of AlN-based devices.

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Section: Resultsmentioning

confidence: 99%

“…[1][2][3][4] These properties make it possible for the applications of bulk acoustic wave resonators (FBARs) and SAW devices. 5,6 So far, AlN thin films have usually been grown on sapphire substrates. However, there are several disadvantages for the epitaxial growth of AlN thin films on sapphire substrates.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of high quality AlN films on metallic aluminum substrates

et al. 2014

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“…[1][2][3][4] Therefore, it is regarded as the most promising semiconductor material for various applications, such as electronic and optoelectronic devices, power semiconductors, short-wavelength light emitters, and film bulk acoustic wave resonators (FBARs). [5][6][7][8] Recently, Si substrates for AlN epitaxy have attracted significant concerns, thanks to its lower cost, larger size, and excellent thermal stability, compared to conventional substrates such as sapphire and SiC. 9,10 Commonly, AlN epitaxial films are grown on Si substrates by metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).…”

Section: Introductionmentioning

confidence: 99%

Growth evolution of AlN films on silicon (111) substrates by pulsed laser deposition

Wang

Yang

et al. 2015

Journal of Applied Physics

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Articles you may be interested inHomoepitaxial AlN thin films deposited on m-plane ( 1 1 ¯ 00 ) AlN substrates by metalorganic chemical vapor deposition AlN films with various thicknesses have been grown on Si(111) substrates by pulsed laser deposition (PLD). The surface morphology and structural property of the as-grown AlN films have been investigated carefully to comprehensively explore the epitaxial behavior. The $2 nm-thick AlN film initially grown on Si substrate exhibits an atomically flat surface with a root-mean-square surface roughness of 0.23 nm. As the thickness increases, AlN grains gradually grow larger, causing a relatively rough surface. The surface morphology of $120 nm-thick AlN film indicates that AlN islands coalesce together and eventually form AlN layers. The decreasing growth rate from 240 to 180 nm/h is a direct evidence that the growth mode of AlN films grown on Si substrates by PLD changes from the islands growth to the layer growth. The evolution of AlN films throughout the growth is studied deeply, and its corresponding growth mechanism is hence proposed. These results are instructional for the growth of high-quality nitride films on Si substrates by PLD, and of great interest for the fabrication of AlN-based devices. V C 2015 AIP Publishing LLC.

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“…To date, AlN films have been prepared on Si substrates, due to the advantages of Si substrates, such as large-size wafers, high crystalline quality, electric and thermal conductivities, and low cost, etc 4 5 6 . So far, AlN films grown by metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) have been used in the application in thin films bulk acoustic wave resonators (FBARs) and surface acoustic wave (SAW) devices, etc 7 8 9 10 . It is known that the performance of AlN-based devices is dependent on the properties of interfaces and surfaces of as-grown AlN films 11 12 13 .…”

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Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition

Wang

Yang

Liu

et al. 2015

Sci Rep

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High-quality AlN epitaxial films have been grown on Si substrates by pulsed laser deposition (PLD) by effective control of the interfacial reactions between AlN films and Si substrates. The surface morphology, crystalline quality and interfacial property of as-grown AlN/Si hetero-interfaces obtained by PLD have been systemically studied. It is found that the amorphous SiAlN interfacial layer is formed during high temperature growth, which is ascribed to the serious interfacial reactions between Si atoms diffused from the substrates and the AlN plasmas produced by the pulsed laser when ablating the AlN target during the high temperature growth. On the contrary, abrupt and sharp AlN/Si hetero-interfaces can be achieved by effectively controlling the interfacial reactions at suitable growth temperature. The mechanisms for the evolution of interfacial layer from the amorphous SiAlN layer to the abrupt and sharp AlN/Si hetero-interfaces by PLD are hence proposed. This work of obtaining the abrupt interfaces and the flat surfaces for AlN films grown by PLD is of paramount importance for the application of high-quality AlN-based devices on Si substrates.

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Visible-light photoresponse of AlN-based film bulk acoustic wave resonator

Cited by 17 publications

References 12 publications

Epitaxial growth of high quality AlN films on metallic aluminum substrates

Epitaxial growth of high quality AlN films on metallic aluminum substrates

Growth evolution of AlN films on silicon (111) substrates by pulsed laser deposition

Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition

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