Visible electroluminescence from porous silicon

Koshida, Nobuyoshi; Koyama, Hideki

doi:10.1063/1.106652

Cited by 670 publications

(193 citation statements)

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“…1993)(P. Hlimonaz, O. Klima, A. Hospodkova, E. Hulicius, J. Oswald, E. Sipek, and J. Kocka, 1994); (psi) has many unique characteristics such as direct and wide modulated energy band gap , high resistivity , vast surface area-to-volume ratio and the same single-crystal structure as bulk silicon .Those advantages make it a suitable material for photodetectors (Nobuyoshi Koshida and Hideki Koyama. 1992) (Zhiliang Chen, Gijs Bosman and Romulo Ochoa.…”

Section: Introductionmentioning

confidence: 99%

Design and Fabrication of Nanostructures Silicon Photodiode

Alwan¹,

Jabbar²

2011

MAS

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A highly sensitive (metal/nanostructure silicon /metal) photodiode has been fabricated from rapid thermal oxidation (RTO) and rapid thermal annealing (RTA) processes, of nanostructure porous silicon prepared by laser assisted etching.Photoresponse was investigated in the wavelength range (400-850nm). A responsivity of (3A/W) was measured at (450 nm) with low value of dark current of about (1 µA /cm 2 ) at 5 volt reverse bias.

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Section: Introductionmentioning

confidence: 99%

Design and Fabrication of Nanostructures Silicon Photodiode

Alwan¹,

Jabbar²

2011

MAS

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“…Radiative recombination of these carriers will give rise to light emission. The first luminescent solid state devices based on this material [1][2][3] consisted of a porous layer on a crystalline substrate. A semitransparent Au or transparent conducting oxide electrode was deposited on top of the porous layer.…”

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confidence: 99%

Electroluminescence from porous silicon due to electron injection from solution

Kooij

Despo

Kelly

1995

Applied Physics Letters

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We report on the electroluminescence from p-type porous silicon due to minority carrier injection from an electrolyte solution. The MV ϩ• radical cation formed in the reduction of divalent methylviologen is able to inject electrons into the conduction band of crystalline and porous silicon. The electrochemistry of this redox process at silicon electrodes is briefly described, and electroluminescence due to recombination of the injected electrons with holes from the substrate is described. The results are discussed in terms of a semiconductor model. © 1995 American Institute of Physics.One of the main reasons for the extensive research on porous silicon is the prospect of integrating optical functions into all-silicon devices. To make a device capable of showing electroluminescence ͑EL͒, electrons and holes have to be injected into the porous silicon structure. Radiative recombination of these carriers will give rise to light emission. The first luminescent solid state devices based on this material 1-3 consisted of a porous layer on a crystalline substrate. A semitransparent Au or transparent conducting oxide electrode was deposited on top of the porous layer. These devices were reported to have very low quantum efficiencies (Ͻ10 Ϫ6 ) and require high operating voltages. More recently, different designs 4,5 and better contact materials 6-8 have led to some improvement in the electrical and luminescent properties. The reasons for the low EL efficiency are not understood, but it has been suggested that the ease with which carriers are injected into luminescent states and the transport mechanisms in the porous silicon play an important role. 9Much higher efficiencies were obtained using a liquid electrolyte junction which contacts the whole porous structure. [10][11][12] The mechanism of the strong visible emission from n-type porous silicon is thought to be similar to that for conventional semiconductors. Electron capture from the valence band, i.e., hole injection, is achieved by a strong oxidizing agent ͑electron acceptor͒ in the solution. At appropriate bias the injected holes recombine with electrons from the conduction band. If this recombination is radiative, EL characteristic of the semiconductor can be observed. 13A similar mechanism should hold for p-type semiconductors, only now electron injection into the conduction band is required. This is possible if the occupied energy levels of the redox couple in the solution overlap with the conduction band of the semiconductor. Thus, a strong reducing agent ͑electron donor͒ has to be used. To our knowledge there have been no reports of EL from p-type porous silicon due to minority carrier injection by a reducing agent in solution.14 Light emission during anodic oxidation of p-type porous silicon in indifferent electrolyte has been reported. 15 This has been attributed to electrons released during oxidation of Si-H surface species or of Si-Si bonds. However, this explanation may be suspect as luminescence is also observed under similar conditions at n-type porous...

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“…Desde que a principios de los años 90 se descubrieron las propiedades fotoluminiscentes [1] y electroluminiscentes [2] de alta eficiencia en el visible del silicio poroso (SP), el interés por este material aumentó de manera considerable. En condiciones normales, el espectro luminiscente tiene una forma aproximadamente gaussiana, con un máximo seleccionable en el rango visible y una anchura total a media altura del orden de 100 nm [3,4].…”

Section: Introductionunclassified

Desarrollo de filtros interferenciales para emisores fotoluminiscentes basados en silicio poroso

Torres¹,

Martin²,

Manotas³

et al. 2004

Bol. Soc. Esp. Ceram. Vidr.

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Las propiedades fotoluminiscentes y electroluminiscentes en el visible del silicio poroso hacen de éste un material muy interesante para el desarrollo de disposotivos optoelectrónicos. Para la obtención de dispositivos de calidad es necesario reducir la semianchura del espectro de luminiscencia del silicio poroso, típicamente de unos 100 nm, para conseguir una emisión monocromática. Esto puede conseguirse formando sobre la capa luminiscente una estructura multicapa, también de silicio poroso, que actúe a modo de filtro interferencial. Así se consigue estrechar el rango de emisión cuanto se desee, sencillamente diseñando el filtro de manera conveniente. En este artículo se estudian las propiedades ópticas de las capas de silicio poroso para el posterior diseño de estos filtros. Palabras clave: silicio poroso, multicapa, filtro interferencial, dispositivos optoelectrónicos, propiedades ópticas Development of interference filters for porous silicon based photoluminescent devicesPorous silicon's photoluminescent and electroluminescent properties make it a very interesting material for the development of optoelectronic devices. To obtain high quality devices it is mandatory to narrowen the porous silicon luminescent spectrum, tipically about 100 nm wide. This can be obtained by forming a porous silicon multilayer structure on the luminescent layer that acts as an interference filter. Thus, the emission spectrum can be narrowed as much as wished by simply designing the filter in the appropriate way. In this article, the optical properties of porous silicon layers are studied for future filter design.

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Visible electroluminescence from porous silicon

Cited by 670 publications

References 26 publications

Design and Fabrication of Nanostructures Silicon Photodiode

Design and Fabrication of Nanostructures Silicon Photodiode

Electroluminescence from porous silicon due to electron injection from solution

Desarrollo de filtros interferenciales para emisores fotoluminiscentes basados en silicio poroso

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