Design and Fabrication of Nanostructures Silicon Photodiode

Alwan, Alwan M.; Jabbar, Allaa A.

doi:10.5539/mas.v5n1p106

Cited by 30 publications

(7 citation statements)

References 4 publications

(3 reference statements)

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“…It is observed that the presence of a PS layer on p-Si wafer causes a shift in this maximum peak to a higher energy and higher responsivity of the photodetector is the sum two terms the sensitivity of the FTO/PS Schottky contact and is the sensitivity of the PS/p-Si heterojunction as well as the reflectivity of porous Si for visible and near infrared regions is very low and that agree with [13]. Also, Alwan et al reported that the porosity of the porous silicon layer leads to hence improve the sensitivity of the formed junction between the crystalline silicon and the PS layer [14].…”

Section: Electrical Propertiessupporting

confidence: 72%

Fabrication and Optoelectronic Properties of Fluoride Tin Oxides/Porous Silicon/p-Silicon Heterojunction

Hadi

2014

ILCPA

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In this paper, formation of a nanostructure semi transparence fluoride tin oxides (FTO) by spray pyrolysis technique on porous silicon PS layer. Porous silicon PS layer was prepared by anodization of p-type silicon wafers to fabricate of the UV-Visible Fluoride-doped tin oxide /Porous silicon /p-Si heterojunction photodetector. Optical properties of FTO thin films were measured. The optical band gap of 3.77 eV for SnO 2 : Ffilm was deduced. From (I-V) and (C-V) measurements, the barrier height ∅ for FTO/PS diode was of 0.77 eV, and the built in voltage V bi , which was of 0.95 V. External quantum efficiency was 55 % at 500 nm which corresponding to peak responsivity of 1.15 A/W at 1 V bias. The PS band gap in the vicinity of PS/c-Si heterojunction was 1.38 eV.

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Section: Electrical Propertiessupporting

confidence: 72%

Fabrication and Optoelectronic Properties of Fluoride Tin Oxides/Porous Silicon/p-Silicon Heterojunction

Hadi

2014

ILCPA

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“…The strong visible photoluminescence (PL) [18] and electroluminescence [19] from PS at room temperature have opened new possibilities for Sibased optoelectronic applications [20]. Fabrication and characterization of PS photodetectors by electrochemical etching were reported [21]. Few studies have reported on the effect of laser irradiation on the PL and structural properties of PS [22,23].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of SnO2 nanostructures employing Nd:YAG laser

et al. 2015

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SnO 2 nanostructures have been prepared on quartz and porous silicon (PS) substrates using rapid photothermal oxidation at 600°C and different oxidation times. The analysis and characterizations were researched. The photovoltage properties of Au/n-SnO 2 /p-PSi/c-Si solar cell are investigated under irradiation of Nd:YAG laser pulses. The PS is synthesized on single crystalline p-type Si using electrochemical etching in aqueous hydrofluoric acid at current density 25 mA/cm 2 for 30 min etching time. The photovoltage properties are found to be depended on laser flounces.

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“…This voltage gives the electron enough energy to overcome the barrier height and that is what called diffusion current. In the reverse bias, one region is existing, where the current increases with the applied voltage and the generated current is dominant [14]. 106 From the obtained results it is clearly that the current produced by CdO/PS/Si is less than PS/Sithat obtained from the CdO/PS/Si which is related to the large junction resistant which reduces the leakage current.…”

Section: Electrical Propertiesmentioning

confidence: 97%

Morphology, chemical and electrical properties of CdO Nanoparticles on porous silicon

Nayef¹

2019

IJP

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In this paper, CdO nanoparticles prepared by pulsed laser deposition techniqueonto a porous silicon (PS) surface prepared by electrochemical etching of p-type silicon wafer with resistivity (1.5-4Ω.cm) in hydrofluoric (HF) acid of 20% concentration. Current density (15 mA/cm2) and etching times (20min). The films were characterized by the measurement of AFM, FTIR spectroscopy and electrical properties. Atomic Force microscopy confirms the nanometric size.Chemical components during the electrochemical etching show on surface of PSchanges take place in the spectrum of CdO deposited PS when compared to as-anodized PS. The electrical properties of prepared PS; namely current density-voltage characteristics under dark, show that the pass current through the PS layer is more than that obtained from the CdO/PS/Si which is related to increasing junction resistivity that come from increasing in depletion width.

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Design and Fabrication of Nanostructures Silicon Photodiode

Cited by 30 publications

References 4 publications

Fabrication and Optoelectronic Properties of Fluoride Tin Oxides/Porous Silicon/p-Silicon Heterojunction

Fabrication and Optoelectronic Properties of Fluoride Tin Oxides/Porous Silicon/p-Silicon Heterojunction

Synthesis of SnO2 nanostructures employing Nd:YAG laser

Morphology, chemical and electrical properties of CdO Nanoparticles on porous silicon

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