Vibrational Absorption of a Nitrogen–Oxygen Complex in GaP

Abstract

In liquid encapsulated Czochralski (LEC) grown GaP, a set of twelve vibrational absorption lines is measured in the frequency region 500 to 1150 cm --1 . They originate from a single defect as their intensities are correlated with each other. It is shown that this defect is a [N-O] complex consisting of several nitrogen and oxygen atoms. This complex is characteristic of GaP produced with the LEC technique under high nitrogen inert gas pressure conditions.

The VFB Modulation Effect of ALD Grown Al2O3, SrO, La2O3 Capping Layers with HfO2 Gate Dielectrics

“…It need to be remembered that the SrO and La 2 O 3 layers grown ex-situ while the Al 2 O 3 layer was grown in-situ with the ALD HfO 2 layer. The fact that the band gap of Al 2 O 3 is wider than SrO and La 2 O 3 can also be an explanation for this behavior (8,10). Figure 3 shows the XPS results of O 1s core-level spectra of the top and bottom Al 2 O 3 and SrO capped HfO 2 films.…”

Vibrational Absorption of Hydrogen Bonded to Interstitial Oxygen in GaAs and GaP

“…Several boules of semi-insulating GaP were grown doped with transition metals to investigate samples with different positions of the Fermi-level (cf. [6]). Additionally, undoped polycrystalline GaAs and GaP were investigated, which have been synthesized in a separate highpressure equipment in p-BN crucibles under 70 bar N 2 or Ar inert gas.…”