Vibrational Absorption of Hydrogen Bonded to Interstitial Oxygen in GaAs and GaP

Ulrici, W.; Jurisch, M.

doi:10.1002/1521-3951(200209)233:2<263::aid-pssb263>3.0.co;2-m

Cited by 7 publications

(4 citation statements)

References 19 publications

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“…Illumination of GaAs : H and GaAs : H : D samples with light of energy 0.7 eV < hν < 1.4 eV results in a decrease in the hydrogen and deuterium stretching modes of (O-H) A and the modes are weakly coupled to the host lattice. The almost identical properties of the modes in GaAs and GaP led to the conclusion that the microscopic structure of the complex responsible must be the same and is caused by interstitial oxygen (O i ) as the core of the complex called (O i -H) I [152]. The structure of the interstitial oxygen is, as mentioned already in this section, nearly identical in GaAs and GaP [147,150].…”

Section: Oxygen In Gaas and Gapmentioning

confidence: 56%

“…Another oxygen-hydrogen complex with very similar properties in GaAs and GaP has been investigated [152]. Its stretching mode of hydrogen is found at 3235.0 cm −1 in GaAs and 3250.9 cm −1 in GaP (cf table 15).…”

Section: Oxygen In Gaas and Gapmentioning

confidence: 99%

“…In both semi-insulating GaAs and GaP, a very sharp ( ≈ 0.05 cm −1 ) vibrational absorption line is measured at nearly the same frequency, 3108 cm −1 [118] and 3106 cm −1 [152]. In samples doped with deuterium, which contain D as well as H, only one additional line is observed in the region of the expected deuterium stretching modes (cf table 15).…”

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confidence: 94%

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Hydrogen-impurity complexes in III–V semiconductors

Ulrici¹

2004

Rep. Prog. Phys.

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This review summarizes the presently available knowledge concerning hydrogen-impurity complexes in III-V compounds. The impurities form shallow acceptors on group III sites (Be, Zn, Cd) and on group V sites (C, Si, Ge) as well as shallow donors on group V sites (S, Se, Te) and on group III sites (Si, Sn). These complexes are mainly revealed by their hydrogen stretching modes. Therefore, nearly all information about their structure and dynamic properties is derived from vibrational spectroscopy. The complexes of shallow impurities with hydrogen have been most extensively investigated in GaAs, GaP and InP. This holds also for Mg-H in GaN. The complexes exhibit a different microscopic structure, which is discussed in detail. The isoelectronic impurity nitrogen, complexed with one hydrogen atom, is investigated in detail in GaAs and GaP. Those complexes can exist in different charge states. The experimental results such as vibrational frequencies, the microscopic structure and the activation energy for reorientation for many of these complexes are in very good agreement with results of ab initio calculations. Different types of oxygen-hydrogen complexes in GaAs and GaP are described, with one hydrogen atom or two hydrogen atoms bonded to oxygen. Three of these complexes in GaAs were found to be electrically active.

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Section: Oxygen In Gaas and Gapmentioning

confidence: 56%

Section: Oxygen In Gaas and Gapmentioning

confidence: 99%

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Hydrogen-impurity complexes in III–V semiconductors

Ulrici¹

2004

Rep. Prog. Phys.

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“…Several complexes of hydrogen with oxygen, carbon, and nitrogen have already been investigated and some knowledge about their structure is available. [1][2][3][4][5][6] However, up to now there is no evidence for a boronhydrogen complex neither in GaAs nor in other III-V compounds. It has to be noted that substitutional boron ͑B Ga ͒ is an isoelectronic impurity, i.e., it is neutral in the GaAs lattice and should not attract charged hydrogen.…”

Section: Introductionmentioning

confidence: 98%

Evidence of a sulfur-boron-hydrogen complex in GaAs grown by the liquid encapsulation Czochralski technique

Ulrici¹,

Clerjaud²

2004

Phys. Rev. B

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In LEC-grown GaAs:S, two vibrational absorption lines are measured at 2382.2 and 2392.8 cm −1 ͑T =7 K͒ and assigned to 11 B-H and 10 B-H stretching modes. Uniaxial stress experiments reveal that the symmetry of the responsible complex is C s. Bond strength considerations suggest that this complex is a S As-B Ga pair passivated by hydrogen bonded to boron. The constituents of this S-B-H complex are located within a {110} plane.

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The nitrogen–hydrogen–vacancy complex in GaAs

Ulrici¹,

Kiessling

Rudolph

2004

Physica Status Solidi (b)

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The local vibrational mode absorption lines at 3079.2 and 983.3 cm -1 , measured in semi-insulating LECgrown GaAs, are due to the stretching and wagging mode of one hydrogen bonded to a light impurity atom. The investigation of GaAs grown without boric oxide encapsulant delivers arguments that this impurity atom is nitrogen in the nitrogen-vacancy (N As -V Ga ) defect, which is responsible for the vibrational quadruplet line at 638 cm -1 .

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Vibrational Absorption of Hydrogen Bonded to Interstitial Oxygen in GaAs and GaP

Cited by 7 publications

References 19 publications

Hydrogen-impurity complexes in III–V semiconductors

Hydrogen-impurity complexes in III–V semiconductors

Evidence of a sulfur-boron-hydrogen complex in GaAs grown by the liquid encapsulation Czochralski technique

The nitrogen–hydrogen–vacancy complex in GaAs

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