The nitrogen–hydrogen–vacancy complex in GaAs

Abstract

The local vibrational mode absorption lines at 3079.2 and 983.3 cm -1 , measured in semi-insulating LECgrown GaAs, are due to the stretching and wagging mode of one hydrogen bonded to a light impurity atom. The investigation of GaAs grown without boric oxide encapsulant delivers arguments that this impurity atom is nitrogen in the nitrogen-vacancy (N As -V Ga ) defect, which is responsible for the vibrational quadruplet line at 638 cm -1 .

Growth and characterization of GaAs crystals produced by the VCz method without boric oxide encapsulation

“…An example is the case of the [Z-H] complex, where it was not possible to distinguish so far, whether the origin of Z was related to oxygen or nitrogen. Now, this complex could be identified as [N-H-V Ga ] [22].…”

Growth of GaAs crystals from Ga-rich melts by the VCz method without liquid encapsulation

“…In crystals grown in N 2 atmosphere, the [N As -V Ga ] complex has been ascertained [42]. The LVM lines of 1244 and 1325 cm À1 , caused by two different B-N defects, were not found in crystals grown without B 2 O 3 independently, whether they were pulled in N 2 or Ar atmosphere.…”

Phosphorus–hydrogen complexes in LEC‐grown InP

“…This result clearly demonstrates that hydrogen (deuterium) coming from the wet B 2 O 3 can be stored in the LEC pulling machine, probably on the inner graphite assemblies of the growth chamber, and is activated during the following growth process. Indications for this effect already came from the presence of hydrogen in GaAs crystals grown without B 2 O 3 encapsulant [11]. It follows …”