Growth of GaAs crystals from Ga-rich melts by the VCz method without liquid encapsulation

Kiessling, Frank M.; Rudolph, P.; Neubert, Michael; Juda, U.; Naumann, M.; Ulrici, W.

doi:10.1016/j.jcrysgro.2004.04.124

Cited by 23 publications

(26 citation statements)

References 30 publications

(37 reference statements)

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“…This findings do not support results obtained from IR laser scattering tomography measurements [8,15] where the formation of As precipitates decreases with decreasing mole fraction, i.e., with increasing Ga content in the melt. Obviously, the features seen in figure 3 are not correlated with precipitates.…”

Section: Resultscontrasting

confidence: 99%

“…The pulling rates were 3-5 mm h -1 . The decomposition of the melt was controlled in situ via the arsenic partial pressures over their free surface by the arsenic source temperature described in detail elsewhere [8,9]. To determine, which melt compositions the crystals have finally been grown from, the Ga excess of the residual last-to-freeze crucible charge was separated and related to it.…”

Section: Methodsmentioning

confidence: 99%

“…In order to grow the crystals from constant melt compositions, the encapsulant has to be removed and the arsenic partial pressure over the melt has to be adjusted in situ. For that, the modified vapour-pressure controlled Czochralski (VCz) technique without boron oxide encapsulation has been developed on laboratory scale in a standard high-pressure Czochralski puller LPA Mark 3 at the IKZ in Berlin [8,9]. Using this method, near-stoichiometric crystals without essential precipitation can be grown from melt compositions Ga 1-y As y less or around y ≈ 0.45, with y = N As /(N Ga + N As ) being the mole fraction of the liquid phase, which is in good agreement with the value predicted by Hurle [10].…”

Section: Introductionmentioning

confidence: 99%

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TEM investigation of precipitates in VCz GaAs crystals

Kirmse¹,

Kiessling

Häusler

et al. 2009

Cryst. Res. Technol.

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Bulk GaAs crystals were grown from various Ga-rich melts by the vapour-pressure controlled Czochralski method in order to reduce As precipitates. The correlation of the melt composition with both, structural perfection and solid composition was examined by various methods of transmission electron microscopy (TEM). From transmission electron diffraction and diffraction contrast imaging a direct correlation between melt composition and sample properties is missing. High-resolution TEM imaging hints to inhomogeneities only for the sample grown from a melt with a mole fraction of y = 0.492. Strain analysis of a selected defect reveals a strained crystal lattice in the surrounding of the defect. For the same sample, high angle annular dark-field imaging and energy dispersive X-ray spectroscopy verify the formation of precipitates. Dedicated to Prof. Wolfgang Neumann on the occasion of his 65th birthday

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Section: Resultscontrasting

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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TEM investigation of precipitates in VCz GaAs crystals

Kirmse¹,

Kiessling

Häusler

et al. 2009

Cryst. Res. Technol.

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“…Recently the author and his co-workers demonstrated by using the VCz arrangement without boric oxide encapsulant that the cellular structure dissolves when the GaAs crystal is growing from proper controlled Ga-rich melt composition [36]. A detailed description of this method is given elsewhere [91]. Fig.…”

Section: Steps To Prevent Dislocation Patterningmentioning

confidence: 99%

Dislocation cell structures in melt‐grown semiconductor compound crystals

Rudolph

2004

Cryst. Res. Technol.

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The phenomenon of dislocation patterning during melt growth of III-V, II-VI and IV-VI semiconductor crystals is discussed. The paper is focused on the formation of cellular structures driven by the growth inherent thermo-mechanical stress. Of particular interest is the scaling of relations between cells size, dislocation density and acting shear stress. Among the materials there are characteristic similarities but also significant variations of the cell genesis. After the related compound specifics are discussed possible measures for retardation of cell patterning during growth are demonstrated.

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“…The melt composition was in situ controlled by the arsenic partial pressure of the As source. Further details of these growth experiments are described elsewhere [10]. Several boules were grown from near-stoichiometric melts using nitrogen as process gas with a pressure of 0.5 MPa.…”

Section: Methodsmentioning

confidence: 99%

The nitrogen–hydrogen–vacancy complex in GaAs

Ulrici¹,

Kiessling

Rudolph

2004

Physica Status Solidi (b)

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The local vibrational mode absorption lines at 3079.2 and 983.3 cm -1 , measured in semi-insulating LECgrown GaAs, are due to the stretching and wagging mode of one hydrogen bonded to a light impurity atom. The investigation of GaAs grown without boric oxide encapsulant delivers arguments that this impurity atom is nitrogen in the nitrogen-vacancy (N As -V Ga ) defect, which is responsible for the vibrational quadruplet line at 638 cm -1 .

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Growth of GaAs crystals from Ga-rich melts by the VCz method without liquid encapsulation

Cited by 23 publications

References 30 publications

TEM investigation of precipitates in VCz GaAs crystals

TEM investigation of precipitates in VCz GaAs crystals

Dislocation cell structures in melt‐grown semiconductor compound crystals

The nitrogen–hydrogen–vacancy complex in GaAs

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