Phosphorus–hydrogen complexes in LEC‐grown InP

Ulrici, W.; Kwasniewski, Albert; Czupalla, M.; Neubert, Mary E.

doi:10.1002/pssb.200402120

Cited by 3 publications

(34 citation statements)

References 16 publications

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“…18. In this section, a model describing the centers with four and three 28 Si atoms is presented. In Appendix B, the model is extended to all possible isotopic configurations of VH 4 and VD 4 .…”

Section: Modeling Of Vhmentioning

confidence: 99%

“…The V( 28 Si-H) 4 center is considered first and the reduced mass of the 28 Si-H oscillator is noted μ. In the context of this model, the angular frequencies ω of the eigenmodes of the center are solutions of…”

Section: A Isotope Shifts and Splittingsmentioning

confidence: 99%

“…This would match perfectly the interstitial silane molecule interpretation as only one silicon atom is involved in this molecule. In the frame of the VH 4 interpretation, it would imply that the line at 2223 cm −1 involves four 28 Si atoms bonded to H while the two lower wavenumbers satellites would involve three 28 Si and one 29 Si or 30 Si atoms. 15 There are however problems with such a description.…”

Section: Introductionmentioning

confidence: 99%

“…15 There are however problems with such a description. If the center with four 28 Si has T d symmetry and only the IR-active T 2 mode of vibration, the symmetry of the center lowers to C 3v when one of the 28 Si atoms is replaced by a 29 Si or 30 Si atom, and the triply degenerate mode splits into a doubly and a singly degenerate modes. One expects therefore five IR-active modes of vibration: one due to V( 28 Si-H) 4 , two to V( 28 Si-H) 3 ( 29 Si-H), and two to V( 28 Si-H) 3 ( 30 Si-H).…”

Section: Introductionmentioning

confidence: 99%

“…One expects therefore five IR-active modes of vibration: one due to V( 28 Si-H) 4 , two to V( 28 Si-H) 3 ( 29 Si-H), and two to V( 28 Si-H) 3 ( 30 Si-H). Another problem comes from the fact that if V( 28 Si-H) 4 has only one configuration, there are four possible orientations in the lattice for V ( 28…”

Section: Introductionmentioning

confidence: 99%

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Si isotopic structure of the infrared absorption of the fully hydrogenated vacancy in silicon

Clerjaud

Pajot²

2013

The Journal of Chemical Physics

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An infrared absorption spectrum consisting in three lines observed around 2223 cm(-1) at liquid helium temperature characterizes a defect common in silicon crystals containing hydrogen. Several investigations of this spectrum have converged towards its assignment to a fully hydrogenated lattice vacancy defect V(Si-H)4. However, the fact that the ratios of the intensities of the three lines have been reported to be proportional to the natural abundances of the three silicon isotopes suggests that only one Si atom is involved in the defect, apparently contradicting the above assignment. In this paper, the spectroscopic investigation of this defect is revisited and the Si-related isotopic structures of V(Si-H)4 and V(Si-D)4 defects are modeled. It is shown that the near proportionalities observed between the intensities of these lines and the abundances of the Si isotopes are fortuitous. Our analysis of the isotope dependence of the 2223 cm(-1) line finds the V(Si-H)4 model to be correct and that the model of a single interstitial Si atom complexed with H can be rejected. The investigation is extended to the analysis of tetra-hydrogenated vacancy trapped by a carbon atom.

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Section: Modeling Of Vhmentioning

confidence: 99%

Section: A Isotope Shifts and Splittingsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Si isotopic structure of the infrared absorption of the fully hydrogenated vacancy in silicon

Clerjaud

Pajot²

2013

The Journal of Chemical Physics

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Vibrational Absorption Associated with Hydrogen

Pajot

Clerjaud

2011

Springer Series in Solid-State Sciences

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Hydrogen-impurity complexes in III–V semiconductors

Ulrici¹

2004

Rep. Prog. Phys.

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This review summarizes the presently available knowledge concerning hydrogen-impurity complexes in III-V compounds. The impurities form shallow acceptors on group III sites (Be, Zn, Cd) and on group V sites (C, Si, Ge) as well as shallow donors on group V sites (S, Se, Te) and on group III sites (Si, Sn). These complexes are mainly revealed by their hydrogen stretching modes. Therefore, nearly all information about their structure and dynamic properties is derived from vibrational spectroscopy. The complexes of shallow impurities with hydrogen have been most extensively investigated in GaAs, GaP and InP. This holds also for Mg-H in GaN. The complexes exhibit a different microscopic structure, which is discussed in detail. The isoelectronic impurity nitrogen, complexed with one hydrogen atom, is investigated in detail in GaAs and GaP. Those complexes can exist in different charge states. The experimental results such as vibrational frequencies, the microscopic structure and the activation energy for reorientation for many of these complexes are in very good agreement with results of ab initio calculations. Different types of oxygen-hydrogen complexes in GaAs and GaP are described, with one hydrogen atom or two hydrogen atoms bonded to oxygen. Three of these complexes in GaAs were found to be electrically active.

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Phosphorus–hydrogen complexes in LEC‐grown InP

Cited by 3 publications

References 16 publications

Si isotopic structure of the infrared absorption of the fully hydrogenated vacancy in silicon

Si isotopic structure of the infrared absorption of the fully hydrogenated vacancy in silicon

Vibrational Absorption Associated with Hydrogen

Hydrogen-impurity complexes in III–V semiconductors

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