Abstract:The H2 dilution technique at a high deposition rate (RD) was investigated by depositing hydrogenated amorphous silicon (a-Si:H) under a high if power density of 750 mW/cm2, which is 20 times as large as that of conventional conditions. It was found that the H2 dilution ratio γ ( = [H2 gas flow rate] / [SiH4 gas flow rate]) tendency of the film properties, such as the H content (CH), optical gap (Eopt), SiH2/SiH and photoconductivity (σph) of a-Si:H is different for the high rf power (750 mW/cm2) and the medium… Show more
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